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化学吸附氧在铁磁体表面诱导产生的大Dzyaloshinskii-Moriya相互作用。

Large Dzyaloshinskii-Moriya interaction induced by chemisorbed oxygen on a ferromagnet surface.

作者信息

Chen Gong, Mascaraque Arantzazu, Jia Hongying, Zimmermann Bernd, Robertson MacCallum, Conte Roberto Lo, Hoffmann Markus, González Barrio Miguel Angel, Ding Haifeng, Wiesendanger Roland, Michel Enrique G, Blügel Stefan, Schmid Andreas K, Liu Kai

机构信息

Physics Department, University of California, Davis, CA 95616, USA.

Depto. Física de Materiales, Universidad Complutense de Madrid, 28040 Madrid, Spain.

出版信息

Sci Adv. 2020 Aug 14;6(33):eaba4924. doi: 10.1126/sciadv.aba4924. eCollection 2020 Aug.

Abstract

The Dzyaloshinskii-Moriya interaction (DMI) is an antisymmetric exchange interaction that stabilizes chiral spin textures. It is induced by inversion symmetry breaking in noncentrosymmetric lattices or at interfaces. Recently, interfacial DMI has been found in magnetic layers adjacent to transition metals due to the spin-orbit coupling and at interfaces with graphene due to the Rashba effect. We report direct observation of strong DMI induced by chemisorption of oxygen on a ferromagnetic layer at room temperature. The sign of this DMI and its unexpectedly large magnitude-despite the low atomic number of oxygen-are derived by examining the oxygen coverage-dependent evolution of magnetic chirality. We find that DMI at the oxygen/ferromagnet interface is comparable to those at ferromagnet/transition metal interfaces; it has enabled direct tailoring of skyrmion's winding number at room temperature via oxygen chemisorption. This result extends the understanding of the DMI, opening up opportunities for the chemisorption-related design of spin-orbitronic devices.

摘要

Dzyaloshinskii-Moriya相互作用(DMI)是一种反对称交换相互作用,它能稳定手性自旋纹理。它是由非中心对称晶格中或界面处的空间反演对称性破缺所诱导的。最近,由于自旋轨道耦合,在与过渡金属相邻的磁性层中发现了界面DMI;由于Rashba效应,在与石墨烯的界面处也发现了界面DMI。我们报告了在室温下通过氧在铁磁层上的化学吸附诱导出强DMI的直接观测结果。通过研究磁性手性随氧覆盖率的变化,得出了这种DMI的符号及其出乎意料的大的大小——尽管氧的原子序数较低。我们发现氧/铁磁体界面处的DMI与铁磁体/过渡金属界面处的DMI相当;它使得在室温下通过氧化学吸附直接调整斯格明子的缠绕数成为可能。这一结果扩展了对DMI的理解,为自旋轨道电子器件的化学吸附相关设计开辟了机会。

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