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解析多孔硅/真黑素杂化物界面形成及稳定性的分子机制

Deciphering Molecular Mechanisms of Interface Buildup and Stability in Porous Si/Eumelanin Hybrids.

作者信息

Pinna Elisa, Melis Claudio, Antidormi Aleandro, Cardia Roberto, Sechi Elisa, Cappellini Giancarlo, d'Ischia Marco, Colombo Luciano, Mula Guido

机构信息

Dipartimento di Fisica, Università degli Studi di Cagliari, S.P. 8 km 0.700, 09042 Monserrato, Italy.

Istituto Officina dei Materiali CNR-IOM, Unità di Cagliari SLACS, Cittadella Universitaria di Monserrato, S.P. 8 km 0.700, 09042 Monserrato, Italy.

出版信息

Int J Mol Sci. 2017 Jul 19;18(7):1567. doi: 10.3390/ijms18071567.

Abstract

Porous Si/eumelanin hybrids are a novel class of organic-inorganic hybrid materials that hold considerable promise for photovoltaic applications. Current progress toward device setup is, however, hindered by photocurrent stability issues, which require a detailed understanding of the mechanisms underlying the buildup and consolidation of the eumelanin-silicon interface. Herein we report an integrated experimental and computational study aimed at probing interface stability via surface modification and eumelanin manipulation, and at modeling the organic-inorganic interface via formation of a 5,6-dihydroxyindole (DHI) tetramer and its adhesion to silicon. The results indicated that mild silicon oxidation increases photocurrent stability via enhancement of the DHI-surface interaction, and that higher oxidation states in DHI oligomers create more favorable conditions for the efficient adhesion of growing eumelanin.

摘要

多孔硅/真黑素杂化物是一类新型的有机-无机杂化材料,在光伏应用方面具有巨大潜力。然而,目前器件设置方面的进展受到光电流稳定性问题的阻碍,这需要详细了解真黑素-硅界面形成和巩固的潜在机制。在此,我们报告了一项综合实验和计算研究,旨在通过表面改性和真黑素操控来探究界面稳定性,并通过形成5,6-二羟基吲哚(DHI)四聚体及其与硅的粘附来模拟有机-无机界面。结果表明,轻度的硅氧化通过增强DHI-表面相互作用提高了光电流稳定性,并且DHI低聚物中更高的氧化态为生长中的真黑素的有效粘附创造了更有利的条件。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/333b/5536055/5211a5ba18ea/ijms-18-01567-g001.jpg

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