Alsulami Abdullah, Griffin Jonathan, Alqurashi Rania, Yi Hunan, Iraqi Ahmed, Lidzey David, Buckley Alastair
Department of Physics & Astronomy, University of Sheffield, Hicks Building, Hounsfield Rd., Sheffield, South Yorkshire S3 7RH, UK.
Department of Chemistry, University of Sheffield, Sheffield, South Yorkshire S3 7HF, UK.
Materials (Basel). 2016 Mar 25;9(4):235. doi: 10.3390/ma9040235.
Low-temperature solution-processable vanadium oxide (V₂O) thin films have been employed as hole extraction layers (HELs) in polymer bulk heterojunction solar cells. V₂O films were fabricated in air by spin-coating vanadium(V) oxytriisopropoxide (s-V₂O) at room temperature without the need for further thermal annealing. The deposited vanadium(V) oxytriisopropoxide film undergoes hydrolysis in air, converting to V₂O with optical and electronic properties comparable to vacuum-deposited V₂O₅. When s-V₂O thin films were annealed in air at temperatures of 100 °C and 200 °C, OPV devices showed similar results with good thermal stability and better light transparency. Annealing at 300 °C and 400 °C resulted in a power conversion efficiency (PCE) of 5% with a decrement approximately 15% lower than that of unannealed films; this is due to the relative decrease in the shunt resistance (R) and an increase in the series resistance (R) related to changes in the oxidation state of vanadium.
低温溶液可加工的氧化钒（V₂O）薄膜已被用作聚合物本体异质结太阳能电池的空穴提取层（HEL）。通过在室温下旋涂三异丙氧基氧钒（s-V₂O）在空气中制备V₂O薄膜，无需进一步热退火。沉积的三异丙氧基氧钒薄膜在空气中发生水解，转化为V₂O，其光学和电子性能与真空沉积的V₂O₅相当。当s-V₂O薄膜在100℃和200℃的空气中退火时，有机光伏（OPV）器件显示出相似的结果，具有良好的热稳定性和更好的光透明度。在300℃和400℃退火导致功率转换效率（PCE）为5%，比未退火的薄膜降低约15%；这是由于与钒氧化态变化相关的并联电阻（R）相对降低和串联电阻（R）增加所致。
