State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, The New and Renewable Energy of Beijing Key Laboratory, North China Electric Power University, Beijing, China.
Phys Chem Chem Phys. 2012 Nov 14;14(42):14589-95. doi: 10.1039/c2cp43125d. Epub 2012 Sep 27.
A solution-processed vanadium oxide (s-VO(x)) anode buffer layer on an indium-tin-oxide (ITO) electrode was used instead of PEDOT:PSS for improving the stability and photovoltaic performance of the polymer solar cells (PSCs). The s-VO(x) layer was prepared by spin-coating a vanadyl acetylacetonate (VO(acac)(2)) isopropyl alcohol solution on the ITO electrode and then thermal annealing at 150 °C for 10 min. The s-VO(x) oxide layer is highly transparent in the visible range and shows effective hole collection property. The photovoltaic performance of the s-VO(x) buffer layer was studied by fabricating the PSCs based on poly(3-hexylthiophene) (P3HT) as an electron donor and four soluble fullerene derivatives, [6,6]-phenyl-C(61)-butyric acid methyl ester (PC(60)BM), [6,6]-phenyl-C(71)-butyric acid methyl ester (PC(70)BM), indene-C(60) bisadduct (IC(60)BA), and indene-C(70) bisadduct (IC(70)BA), as electron acceptors. The PSCs with the s-VO(x) buffer layer show improved performance in comparison with the traditional devices with the PEDOT:PSS buffer layer on ITO, no matter which fullerene derivative was used as an acceptor. The power conversion efficiency of the PSC based on P3HT:IC(70)BA (1 : 1, w/w) with the s-VO(x) anode buffer layer reached 6.35% under the illumination of AM1.5G 100 mW cm(-2).
一种溶液处理的氧化钒（s-VO(x)）阳极缓冲层被应用于氧化铟锡（ITO）电极上，取代聚（3,4-乙烯二氧噻吩）：聚苯乙烯磺酸盐（PEDOT:PSS），以提高聚合物太阳能电池（PSCs）的稳定性和光伏性能。s-VO(x)层通过在 ITO 电极上旋涂 1-戊醇溶液的氧钒基乙酰丙酮盐（VO(acac)(2)）并在 150°C 下热退火 10 分钟来制备。s-VO(x)氧化物层在可见光范围内具有高透明度，并表现出有效的空穴收集性能。通过基于聚（3-己基噻吩）（P3HT）作为电子给体和四种可溶性富勒烯衍生物[6,6]-苯基-C（61）-丁酸甲酯（PC（60）BM）、[6,6]-苯基-C（71）-丁酸甲酯（PC（70）BM）、茚并-C（60）双加成物（IC（60）BA）和茚并-C（70）双加成物（IC（70）BA）来制备 PSCs，研究了 s-VO(x)缓冲层的光伏性能。使用 ITO 上的 PEDOT:PSS 缓冲层的传统器件相比，无论使用哪种富勒烯衍生物作为受体，具有 s-VO(x)缓冲层的 PSCs 都表现出了更好的性能。基于 P3HT:IC(70)BA（1:1，w/w）的 PSC 与 s-VO(x)阳极缓冲层的功率转换效率在 AM1.5G 100 mW cm(-2)的光照下达到 6.35%。
