Ho Wen-Jeng, Sue Ruei-Siang, Lin Jian-Cheng, Syu Hong-Jang, Lin Ching-Fuh
Department of Electro-Optical Engineering, National Taipei University of Technology, No. 1, Section 3, Zhongxial East Road, Taipei 10608, Taiwan.
Graduate Institute of Photonics and Optoelectronics, National Taiwan University, No. 1, Section 4, Roosevelt Road, Taipei 10617, Taiwan.
Materials (Basel). 2016 Aug 10;9(8):682. doi: 10.3390/ma9080682.
This paper reports impressive improvements in the optical and electrical performance of metal-oxide-semiconductor (MOS)-structure silicon solar cells through the incorporation of plasmonic indium nanoparticles (In-NPs) and an indium-tin-oxide (ITO) electrode with periodic holes (perforations) under applied bias voltage. Samples were prepared using a plain ITO electrode or perforated ITO electrode with and without In-NPs. The samples were characterized according to optical reflectance, dark current voltage, induced capacitance voltage, external quantum efficiency, and photovoltaic current voltage. Our results indicate that induced capacitance voltage and photovoltaic current voltage both depend on bias voltage, regardless of the type of ITO electrode. Under a bias voltage of 4.0 V, MOS cells with perforated ITO and plain ITO, respectively, presented conversion efficiencies of 17.53% and 15.80%. Under a bias voltage of 4.0 V, the inclusion of In-NPs increased the efficiency of cells with perforated ITO and plain ITO to 17.80% and 16.87%, respectively.
本文报道了通过在施加偏置电压的情况下，将等离子体铟纳米颗粒（In-NPs）与具有周期性孔洞（穿孔）的铟锡氧化物（ITO）电极相结合，金属氧化物半导体（MOS）结构硅太阳能电池在光学和电学性能方面取得了显著改善。使用带有或不带有In-NPs的普通ITO电极或穿孔ITO电极制备样品。根据光反射率、暗电流电压、感应电容电压、外部量子效率和光伏电流电压对样品进行表征。我们的结果表明，无论ITO电极的类型如何，感应电容电压和光伏电流电压均取决于偏置电压。在4.0 V的偏置电压下，具有穿孔ITO和平板ITO的MOS电池的转换效率分别为17.53%和15.80%。在4.0 V的偏置电压下，加入In-NPs使具有穿孔ITO和平板ITO的电池效率分别提高到17.80%和16.87%。
