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单结砷化镓太阳能电池上溅射二氧化硅、氧化铟锡及二氧化硅/氧化铟锡减反射涂层的电学和光学特性

Electrical and Optical Characterization of Sputtered Silicon Dioxide, Indium Tin Oxide, and Silicon Dioxide/Indium Tin Oxide Antireflection Coating on Single-Junction GaAs Solar Cells.

作者信息

Ho Wen-Jeng, Lin Jian-Cheng, Liu Jheng-Jie, Bai Wen-Bin, Shiao Hung-Pin

机构信息

Department of Electro-Optical Engineering, National Taipei University of Technology, Taipei 10608, Taiwan.

Win Semiconductor Corp., Taoyuan 333, Taiwan.

出版信息

Materials (Basel). 2017 Jun 26;10(7):700. doi: 10.3390/ma10070700.

DOI:10.3390/ma10070700
PMID:28773063
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5551743/
Abstract

This study characterized the electrical and optical properties of single-junction GaAs solar cells coated with antireflective layers of silicon dioxide (SiO₂), indium tin oxide (ITO), and a hybrid layer of SiO₂/ITO applied using Radio frequency (RF) sputtering. The conductivity and transparency of the ITO film were characterized prior to application on GaAs cells. Reverse saturation-current and ideality factor were used to evaluate the passivation performance of the various coatings on GaAs solar cells. Optical reflectance and external quantum efficiency response were used to evaluate the antireflective performance of the coatings. Photovoltaic current-voltage measurements were used to confirm the efficiency enhancement obtained by the presence of the anti-reflective coatings. The conversion efficiency of the GaAs cells with an ITO antireflective coating (23.52%) exceeded that of cells with a SiO₂ antireflective coating (21.92%). Due to lower series resistance and higher short-circuit current-density, the carrier collection of the GaAs cell with ITO coating exceeded that of the cell with a SiO₂/ITO coating.

摘要

本研究对采用射频（RF）溅射法涂覆二氧化硅（SiO₂）、氧化铟锡（ITO）以及SiO₂/ITO混合层抗反射层的单结砷化镓太阳能电池的电学和光学特性进行了表征。在将ITO薄膜应用于砷化镓电池之前，对其导电性和透明度进行了表征。利用反向饱和电流和理想因子来评估各种涂层对砷化镓太阳能电池的钝化性能。利用光学反射率和外部量子效率响应来评估涂层的抗反射性能。通过光伏电流-电压测量来确认抗反射涂层的存在所带来的效率提升。具有ITO抗反射涂层的砷化镓电池的转换效率（23.52%）超过了具有SiO₂抗反射涂层的电池（21.92%）。由于串联电阻较低且短路电流密度较高，具有ITO涂层的砷化镓电池的载流子收集能力超过了具有SiO₂/ITO涂层的电池。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7e78/5551743/ce0e4473e8a0/materials-10-00700-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7e78/5551743/b7903a007ab9/materials-10-00700-g001.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7e78/5551743/0ea94c67a08e/materials-10-00700-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7e78/5551743/8aa65d40bbde/materials-10-00700-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7e78/5551743/62b490fc92b4/materials-10-00700-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7e78/5551743/ce0e4473e8a0/materials-10-00700-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7e78/5551743/b7903a007ab9/materials-10-00700-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7e78/5551743/ba44e5a0704e/materials-10-00700-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7e78/5551743/638f0030d5c5/materials-10-00700-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7e78/5551743/2152b118d671/materials-10-00700-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7e78/5551743/0ea94c67a08e/materials-10-00700-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7e78/5551743/8aa65d40bbde/materials-10-00700-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7e78/5551743/62b490fc92b4/materials-10-00700-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7e78/5551743/ce0e4473e8a0/materials-10-00700-g008.jpg

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