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锐钛矿 TiO(110)表面上的四苯基卟啉的高温平铺。

Very high temperature tiling of tetraphenylporphyrin on rutile TiO(110).

机构信息

CNR-IOM, Laboratorio Nazionale TASC, I-34149 Trieste, Italy.

出版信息

Nanoscale. 2017 Aug 17;9(32):11694-11704. doi: 10.1039/c7nr04093h.

DOI:10.1039/c7nr04093h
PMID:28776050
Abstract

We demonstrate the thermal stability up to 450 °C of a titanium(iv)-porphyrin monolayer grown on the rutile TiO(110) surface. Starting from a film of metal-free tetra-phenyl-porphyrin, 2HTPP, deposited at room temperature, we show that, beyond the self-metalation reaction at 150°-200 °C, a second phase transition takes place at ∼350 °C. Using surface diffraction and microscopy, we observe a change of the phase symmetry from (2 × 4)-obliq to (2 × 6)-rect. Core level photoemission indicates that the chemical states of both the molecular tetrapyrrolic macrocycle and the substrate are unchanged. X-ray absorption spectroscopy reveals that the driving mechanism is a rotation of the phenyl terminations towards the substrate (flattening) that triggers a conformational change of the molecule through partial cyclo-dehydrogenation. From comparison with first principles calculations, we show that the common feature of these multiple phase transitions is the chemical nature of the porphyrin bonding atop the substrate oxygen rows: the coordination of the macrocycle central pocket to the oxygen atoms beneath is preserved throughout both the self-metalation and flattening reactions. The molecular orientation and arrangement are determined by steric constraints and intermolecular interactions, whereas the specific adsorption site is further stabilized by the interaction of the peripheral C-H network with the adjacent oxygen rows. Porphyrins are thus trapped at the TiO(110) surface, where they demonstrate an exceptionally high thermal stability (up to ∼450 °C), which makes this interface potentially useful for sensors and photocatalysis applications in harsh environments.

摘要

我们证明了生长在金红石 TiO(110) 表面的钛(iv)-卟啉单层在高达 450°C 的温度下具有热稳定性。从室温下沉积的金属自由四苯基卟啉,2HTPP 的薄膜开始,我们表明,在 150°-200°C 之间发生自金属化反应之后,在约 350°C 时会发生第二相转变。使用表面衍射和显微镜,我们观察到相对称性从 (2 × 4)-obliq 转变为 (2 × 6)-rect。核心层光电子能谱表明,分子四吡咯大环和基底的化学状态都没有变化。X 射线吸收光谱表明,驱动力是苯环末端向基底(扁平化)的旋转,这通过部分环脱氢引发分子构象变化。通过与第一性原理计算的比较,我们表明这些多次相转变的共同特征是卟啉在基底氧行上的键合的化学性质:大环中心口袋与下方氧原子的配位在自金属化和扁平化反应过程中都得以保留。分子取向和排列由空间位阻和分子间相互作用决定,而特定的吸附位则进一步通过外围 C-H 网络与相邻氧行的相互作用而稳定。因此,卟啉被捕获在 TiO(110) 表面,在该表面它们表现出异常高的热稳定性(高达约 450°C),这使得该界面在恶劣环境中的传感器和光催化应用中具有潜在的用途。

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