School of Electronic Science and Engineering, National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing, 210000, People's Republic of China.
Nanotechnology. 2017 Nov 24;28(47):475704. doi: 10.1088/1361-6528/aa852e.
Here, we report the enhanced luminescence and optical gain by appropriate P-doping in Si nanocrystals (NCs)/SiO multilayers with ultra-small size of ∼1.9 nm. The luminescence intensity is enhanced by 19.4% compared to that of an un-doped NC and the optical gain is as high as 171.8 cm, which can be attributed to the reduction of surface defect states by the passivation of P impurities as revealed by electron spin resonance spectra. Further increasing the P-doping ratios results in the increase of conduction electrons due to the substitutional doping of phosphorus in the Si NCs, which favors the Auger recombination process. Consequently, both the luminescence intensity and the optical gain decrease rapidly. It is demonstrated that introduction of the suitable impurities can effectively modulate the surface chemical environment of Si NCs, which provides a new way to control the physical properties of Si NCs.
在这里，我们报告了在具有超小尺寸约 1.9nm 的 Si 纳米晶（NCs）/SiO 多层膜中通过适当的 P 掺杂来增强发光和光学增益。与未掺杂的 NC 相比，发光强度增强了 19.4%，光学增益高达 171.8cm，这归因于电子自旋共振谱表明，通过 P 杂质的钝化可以减少表面缺陷态。进一步增加 P 掺杂比会由于磷在 Si NCs 中的替位掺杂而导致导带电子的增加，这有利于俄歇复合过程。因此，发光强度和光学增益都迅速下降。结果表明，引入合适的杂质可以有效地调节 Si NCs 的表面化学环境，这为控制 Si NCs 的物理性质提供了一种新方法。
