在纳米级 Co-SiO-Si 结构中观察到的磁调光电响应。

Magnetically tuned photoelectric response observed in nanoscale Co-SiO-Si structures.

机构信息

State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Physics and Astronomy, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, People's Republic of China. Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, People's Republic of China.

出版信息

Nanotechnology. 2017 Oct 27;28(43):435206. doi: 10.1088/1361-6528/aa85ff. Epub 2017 Aug 14.

DOI:10.1088/1361-6528/aa85ff

PMID:28805656

Abstract

We report a large magnetically tuned lateral photovoltaic effect (LPE) observed in nanoscale Co-SiO-Si structures. This tunable effect strongly depends on the location of two electrodes. The change ratio of lateral photovoltage (LPV) can reach a considerable value of 94.15% under an external magnetic field of 1.77 Teslas. This phenomenon is mainly ascribed to the asymmetric Lorentz force acting on the photo-current in the region of the edge area of the nanostructure. It adds a new functionality to traditional LPE-based devices, and provides a potential prospect for the development of multifunctional high-sensitive photoelectric devices or sensors.

摘要

我们报告了在纳米级 Co-SiO-Si 结构中观察到的大磁调横向光电压效应（LPE）。这种可调谐效应强烈依赖于两个电极的位置。在外磁场为 1.77 特斯拉的情况下，横向光电压（LPV）的变化率可达到相当大的 94.15%。这种现象主要归因于在纳米结构边缘区域的光电流上作用的不对称洛伦兹力。它为基于传统 LPE 的器件增添了新的功能，为多功能高灵敏度光电设备或传感器的发展提供了潜在的前景。