n-Si/SiO/PEDOT:PSS结构中增强的横向光伏效应。

Enhanced Lateral Photovoltaic Effects in n-Si/SiO/PEDOT:PSS Structures.

作者信息

Zhang Jingying, Meng Kang, Ni Gang

机构信息

Department of Optical Science and Engineering, Fudan University, Shanghai 200433, China.

Shanghai Engineering Research Center for Ultra-Precision Optical Manufacturing, Fudan University, Shanghai 200433, China.

出版信息

Polymers (Basel). 2022 Mar 31;14(7):1429. doi: 10.3390/polym14071429.

DOI:10.3390/polym14071429

PMID:35406302

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9002826/

Abstract

Organic/silicon hybrid structures have been extensively studied for the application of solar cells due to their high photoelectric conversion efficiency and simple fabrication process. However, studies of lateral photovoltaic effects (LPEs) in the devices are still scarce. Herein, the Si/SiO/PEDOT:PSS devices were prepared by spin-coating, and showing the lateral photovoltage (LPV) sensitivity of 14.0 mV/mm at room temperature, which is higher than the control samples of Si/SiO (0.1 mV/mm) and Si/PEDOT:PSS (9.0 mV/mm) structures. With the decrease in temperature, the lateral photovoltage increases initially, and reaches a peak at around 210 K, then drops accordingly. The enhancement of LPE can be mainly ascribed to the formation of the p-n junction and the native oxide layer at the organic/inorganic interface.

摘要

由于有机/硅混合结构具有高光电转换效率和简单的制造工艺，因此已被广泛研究用于太阳能电池应用。然而，对该器件中横向光伏效应（LPE）的研究仍然很少。在此，通过旋涂制备了Si/SiO/PEDOT:PSS器件，在室温下显示出14.0 mV/mm的横向光电压（LPV）灵敏度，高于Si/SiO（0.1 mV/mm）和Si/PEDOT:PSS（9.0 mV/mm）结构的对照样品。随着温度降低，横向光电压最初增加，并在约210 K处达到峰值，然后相应下降。LPE的增强主要归因于有机/无机界面处p-n结和天然氧化层的形成。