Liu Xingfang, Sun Guosheng, Liu Bin, Yan Guoguo, Guan Min, Zhang Yang, Zhang Feng, Chen Yu, Dong Lin, Zheng Liu, Liu Shengbei, Tian Lixin, Wang Lei, Zhao Wanshun, Zeng Yiping
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
Materials (Basel). 2013 Apr 16;6(4):1543-1553. doi: 10.3390/ma6041543.
We report a new method for growing hexagonal columnar nanograin structured silicon carbide (SiC) thin films on silicon substrates by using graphene-graphitic carbon nanoflakes (GGNs) templates from solid carbon sources. The growth was carried out in a conventional low pressure chemical vapor deposition system (LPCVD). The GGNs are small plates with lateral sizes of around 100 nm and overlap each other, and are made up of nanosized multilayer graphene and graphitic carbon matrix (GCM). Long and straight SiC nanograins with hexagonal shapes, and with lateral sizes of around 200-400 nm are synthesized on the GGNs, which form compact SiC thin films.
我们报道了一种新方法，通过使用来自固体碳源的石墨烯-石墨化碳纳米薄片（GGNs）模板，在硅衬底上生长六方柱状纳米晶粒结构的碳化硅（SiC）薄膜。生长过程在传统的低压化学气相沉积系统（LPCVD）中进行。GGNs是横向尺寸约为100nm的小板，它们相互重叠，由纳米尺寸的多层石墨烯和石墨化碳基质（GCM）组成。在GGNs上合成了长而直的六方形状、横向尺寸约为200-400nm的SiC纳米晶粒，这些纳米晶粒形成了致密的SiC薄膜。
