Zhou Feng, Ji Wei
Opt Lett. 2017 Aug 15;42(16):3113-3116. doi: 10.1364/OL.42.003113.
We develop a theoretical model to quantify the two-photon absorption (2 PA) coefficients of monolayer MoS. Based on two-dimensional excitons, our model reveals the 2 PA coefficient spectrum on the order of 0.01-0.1 cm/MW in the near-infrared for monolayer MoS. As compared to the band theory for bulk semiconductors, these coefficients are enhanced by at least one order of magnitude. Our model is in agreement with light-intensity-dependent photocurrent measurements on a monolayer MoS, subband photodetector with femtosecond laser pulses.
我们开发了一个理论模型来量化单层二硫化钼（MoS）的双光子吸收（2PA）系数。基于二维激子，我们的模型揭示了单层MoS在近红外区域的双光子吸收系数谱，其量级为0.01 - 0.1 cm/MW。与体半导体的能带理论相比，这些系数至少提高了一个数量级。我们的模型与使用飞秒激光脉冲对单层MoS子带光电探测器进行的光强依赖光电流测量结果一致。
