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应变硅光子学

Strained Silicon Photonics.

作者信息

Schriever Clemens, Bohley Christian, Schilling Jörg, Wehrspohn Ralf B

机构信息

Centre for Innovation Competence SiLi-nano, Martin-Luther-University Halle-Wittenberg, Karl-Freiherr-von-Fritsch-Str. 3, Halle (Saale) 06120, Germany.

Fraunhofer Institute for Mechanics of Materials, Walter-Hülse-Str. 1, Halle (Saale) 06120, Germany.

出版信息

Materials (Basel). 2012 May 22;5(5):889-908. doi: 10.3390/ma5050889.

DOI:10.3390/ma5050889
PMID:28817015
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5458964/
Abstract

A review of recent progress in the field of strained silicon photonics is presented. The application of strain to waveguide and photonic crystal structures can be used to alter the linear and nonlinear optical properties of these devices. Here, methods for the fabrication of strained devices are summarized and recent examples of linear and nonlinear optical devices are discussed. Furthermore, the relation between strain and the enhancement of the second order nonlinear susceptibility is investigated, which may enable the construction of optically active photonic devices made of silicon.

摘要

本文综述了应变硅光子学领域的最新进展。将应变应用于波导和光子晶体结构可用于改变这些器件的线性和非线性光学特性。在此,总结了应变器件的制造方法,并讨论了线性和非线性光学器件的近期实例。此外,还研究了应变与二阶非线性极化率增强之间的关系,这可能有助于构建由硅制成的光学活性光子器件。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b349/5458964/d42d19d2af07/materials-05-00889-g015.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b349/5458964/83b17d18ce6a/materials-05-00889-g013.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b349/5458964/1a483d451bd2/materials-05-00889-g014.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b349/5458964/2639c77e9719/materials-05-00889-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b349/5458964/851728b2301c/materials-05-00889-g002.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b349/5458964/5b2c48e34573/materials-05-00889-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b349/5458964/e4e0399ffc68/materials-05-00889-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b349/5458964/5a1ba48f550b/materials-05-00889-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b349/5458964/f44af2f1b267/materials-05-00889-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b349/5458964/031918fb4f5a/materials-05-00889-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b349/5458964/b977f83737b0/materials-05-00889-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b349/5458964/90dfdb60d1cd/materials-05-00889-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b349/5458964/bedf7dffe2ab/materials-05-00889-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b349/5458964/344152a6b7c5/materials-05-00889-g012.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b349/5458964/83b17d18ce6a/materials-05-00889-g013.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b349/5458964/d42d19d2af07/materials-05-00889-g015.jpg

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本文引用的文献

1
Second-harmonic generation in silicon waveguides strained by silicon nitride.硅波导中氮化硅应变的二次谐波产生。
Nat Mater. 2011 Dec 4;11(2):148-54. doi: 10.1038/nmat3200.
2
Pockels effect based fully integrated, strained silicon electro-optic modulator.基于普克尔斯效应的全集成应变硅电光调制器。
Opt Express. 2011 Aug 29;19(18):17212-9. doi: 10.1364/OE.19.017212.
3
Strain dependence of second-harmonic generation in silicon.硅中二次谐波产生的应变依赖性。
Opt Lett. 2010 Feb 1;35(3):273-5. doi: 10.1364/OL.35.000273.
4
Controlling photonic structures using optical forces.利用光力控制光子结构。
Nature. 2009 Dec 3;462(7273):633-6. doi: 10.1038/nature08584. Epub 2009 Nov 15.
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Large tuning of birefringence in two strip silicon waveguides via optomechanical motion.通过光机械运动实现两条带状硅波导中双折射的大幅调谐。
Opt Express. 2009 Sep 28;17(20):17818-28. doi: 10.1364/OE.17.017818.
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Strained silicon as a new electro-optic material.应变硅作为一种新型电光材料。
Nature. 2006 May 11;441(7090):199-202. doi: 10.1038/nature04706.
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