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应变硅光子学

Strained Silicon Photonics.

作者信息

Schriever Clemens, Bohley Christian, Schilling Jörg, Wehrspohn Ralf B

机构信息

Centre for Innovation Competence SiLi-nano, Martin-Luther-University Halle-Wittenberg, Karl-Freiherr-von-Fritsch-Str. 3, Halle (Saale) 06120, Germany.

Fraunhofer Institute for Mechanics of Materials, Walter-Hülse-Str. 1, Halle (Saale) 06120, Germany.

出版信息

Materials (Basel). 2012 May 22;5(5):889-908. doi: 10.3390/ma5050889.

Abstract

A review of recent progress in the field of strained silicon photonics is presented. The application of strain to waveguide and photonic crystal structures can be used to alter the linear and nonlinear optical properties of these devices. Here, methods for the fabrication of strained devices are summarized and recent examples of linear and nonlinear optical devices are discussed. Furthermore, the relation between strain and the enhancement of the second order nonlinear susceptibility is investigated, which may enable the construction of optically active photonic devices made of silicon.

摘要

本文综述了应变硅光子学领域的最新进展。将应变应用于波导和光子晶体结构可用于改变这些器件的线性和非线性光学特性。在此,总结了应变器件的制造方法,并讨论了线性和非线性光学器件的近期实例。此外,还研究了应变与二阶非线性极化率增强之间的关系,这可能有助于构建由硅制成的光学活性光子器件。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b349/5458964/2639c77e9719/materials-05-00889-g001.jpg

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