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菲咯并二噻吩(稠合联苯并[c]噻吩)衍生物的合成及其光学和电化学性质

Synthesis and optical and electrochemical properties of a phenanthrodithiophene (fused-bibenzo[c]thiophene) derivative.

作者信息

Ooyama Yousuke, Enoki Toshiaki, Aoyama Satoshi, Ohshita Joji

机构信息

Department of Applied Chemistry, Graduate School of Engineering, Hiroshima University, 1-4-1 Kagamiyama, Higashi-Hiroshima 739-8527, Japan.

出版信息

Org Biomol Chem. 2017 Sep 13;15(35):7302-7307. doi: 10.1039/c7ob01695f.

DOI:10.1039/c7ob01695f
PMID:28819667
Abstract

We designed and developed a fused-bibenzo[c]thiophene, namely, 2,9-bis(tert-butyldimethylsilyl)phenanthro[9,8-bc:10,1-b'c']dithiophene (PHDT-Si), as a new π-building block in the emitters, photosensitizers and semiconductors for organic optoelectronic devices. Based on photophysical (photoabsorption, fluorescence and time-resolved fluorescence spectroscopy) and electrochemical measurements (cyclic voltammetry), and density functional theory (DFT) calculations, this work reveals that the fused-bibenzo[c]thiophene PHDT-Si, which is prepared by an efficient synthesis method, has a rigid, high planar and expanded π-conjugation structure, and possesses intense photoabsorption and fluorescence properties (λ = 598 nm (ε = 41 000 M cm) and λ = 613 nm (Φ = 0.74) in toluene) in the long-wavelength region and undergoes an electrochemically reversible oxidation process, compared to non-fused 1,1'-bis(tert-butyldimethylsilyl)-4,4'-bibenzo[c]thiophene (BBT-Si).

摘要

我们设计并开发了一种稠合联苯并[c]噻吩,即2,9-双(叔丁基二甲基硅基)菲并[9,8-bc:10,1-b'c']二噻吩(PHDT-Si),作为用于有机光电器件的发光体、光敏剂和半导体中的一种新型π-结构单元。基于光物理(光吸收、荧光和时间分辨荧光光谱)和电化学测量(循环伏安法)以及密度泛函理论(DFT)计算,这项工作表明,通过高效合成方法制备的稠合联苯并[c]噻吩PHDT-Si具有刚性、高平面性和扩展的π-共轭结构,并且在长波长区域具有强烈的光吸收和荧光特性(在甲苯中λ = 598 nm(ε = 41000 M cm)和λ = 613 nm(Φ = 0.74)),并且与未稠合的1,1'-双(叔丁基二甲基硅基)-4,4'-联苯并[c]噻吩(BBT-Si)相比,经历了一个电化学可逆氧化过程。

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