Lee Jenn-Min, Haw Shu-Chih, Chen Shi-Wei, Chen Shin-Ann, Ishii Hirofumi, Tsuei Ku-Ding, Hiraoka Nozomu, Liao Yen-Fa, Lu Kueih-Tzu, Chen Jin-Ming
National Synchrotron Radiation Research Center (NSRRC), 101 Hsin-Ann Road, 30076 Hsinchu, Taiwan.
Dalton Trans. 2017 Sep 12;46(35):11664-11668. doi: 10.1039/c7dt02039b.
High-resolution partial-fluorescence-yield X-ray absorption and resonant X-ray emission spectra were used to characterize the temperature dependence of Sm 4f configurations and orbital/charge degree of freedom in SmB. The variation of Sm 4f configurations responds well to the formed Kondo gap, below 140 K, and an in-gap state, below 40 K. The topological in-gap state is correlated with the fluctuating population of Sm 4f configurations that arises via carrier transfer between 3d4f and 3d4f states; both states are partially delocalized, and the mediating 5d orbital plays the role of a transfer path. Complementary results shown in this work thus manifest the importance of configuration fluctuations and orbital delocalization in the topological surface state of SmB.
高分辨率部分荧光产额X射线吸收光谱和共振X射线发射光谱被用于表征SmB中Sm 4f组态以及轨道/电荷自由度的温度依赖性。Sm 4f组态的变化对低于140 K时形成的近藤能隙以及低于40 K时的能隙态有良好响应。拓扑能隙态与通过3d-4f和3d-4f态之间的载流子转移产生的Sm 4f组态的波动占据相关；这两种状态都是部分离域的，并且中介5d轨道起到转移路径的作用。因此，这项工作中所示的补充结果表明了组态涨落和轨道离域在SmB拓扑表面态中的重要性。
