Department of Chemistry, Northwestern University , 2145 Sheridan Road, Evanston, Illinois 60208-3113, United States.
ACS Nano. 2017 Oct 24;11(10):10070-10076. doi: 10.1021/acsnano.7b04414. Epub 2017 Aug 31.
Understanding the electronic structure of doped semiconductors is essential to realize advancements in electronics and in the rational design of nanoscale devices. Reported here are the results of time-resolved X-ray absorption studies on copper-doped cadmium sulfide nanoparticles that provide an explicit description of the electronic dynamics of the dopants. The interaction of a dopant ion and an excess charge carrier is unambiguously observed via monitoring the oxidation state. The experimental data combined with DFT calculations demonstrate that dopant bonding to the host matrix is modulated by its interaction with charge carriers. Furthermore, the transient photoluminescence and the kinetics of dopant oxidation reveal the presence of two types of surface-bound ions that create midgap states.
了解掺杂半导体的电子结构对于实现电子学的进步和纳米尺度器件的合理设计至关重要。本文报道了对铜掺杂硫化镉纳米粒子的时间分辨 X 射线吸收研究结果,该结果提供了对掺杂剂电子动力学的明确描述。通过监测氧化态,可以清楚地观察到掺杂离子与过剩载流子的相互作用。实验数据与 DFT 计算相结合,证明了掺杂剂与宿主基质的键合受到其与载流子相互作用的调制。此外,瞬态光致发光和掺杂剂氧化动力学揭示了存在两种类型的表面结合离子,它们会产生带隙中间态。