College of Chemistry, Chemical Engineering, and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, National Center for International Research, and ‡Institute of Functional Nano & Soft Materials Laboratory and Jiangsu Key Laboratory for Carbon-Based Functional Materials, Soochow University , Suzhou 215123, P. R. China.
ACS Appl Mater Interfaces. 2017 Sep 27;9(38):32930-32938. doi: 10.1021/acsami.7b09132. Epub 2017 Sep 12.
Thermal-sensitive materials, such as metallosupramolecular polymers, have been integrated into devices for a broad range of applications. However, the role of these materials is limited to temperature sensing and the lack of a memory function. Herein, we present novel [PolyCo-L1L2-PF]-based organic resistive memories (ORMs) possessing both a thermal response and ternary memory behavior with three electrical resistance states [high (HRS), intermediate (IRS), and low (LRS)]. Furthermore, the thermal behavior can be memorized by the Al/[PolyCoL1L2-PF]/indium-tin oxide devices. Heating and cooling the devices at a LRS results in a switch from the LRS to a HRS and further to a LRS, indicating that the thermal behavior can be efficiently memorized. Following the heating and cooling process, devices at a HRS retain their ternary memory behavior, while an unstable resistance variation behavior is observed at the IRS. We propose a possible mechanism for the thermoresponsive memory behavior, and this finding provides a guide for the design of future thermoresponsive ORMs.
热敏材料,如金属超分子聚合物,已被整合到各种应用的设备中。然而,这些材料的作用仅限于温度感应,且缺乏记忆功能。在此,我们提出了一种新型基于[PolyCo-L1L2-PF]的有机电阻式存储器(ORM),它具有热响应和三种电阻状态[高(HRS)、中(IRS)和低(LRS)]的三进制存储行为。此外,Al/[PolyCoL1L2-PF]/氧化铟锡器件可以记忆热行为。在 LRS 下加热和冷却器件会导致从 LRS 切换到 HRS 再切换到 LRS,这表明热行为可以被有效地记忆。在加热和冷却过程之后,处于 HRS 的器件保留其三进制存储行为,而 IRS 则观察到不稳定的电阻变化行为。我们提出了一种热敏存储行为的可能机制,这一发现为设计未来的热敏 ORM 提供了指导。