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金纳米颗粒-TiO 薄膜中高效等离子体热电子注入的定量分析。

Quantification of Efficient Plasmonic Hot-Electron Injection in Gold Nanoparticle-TiO Films.

机构信息

Chemistry Division and ‡Optical Sciences Division, U.S. Naval Research Laboratory , Washington, D.C. 20375, United States.

出版信息

Nano Lett. 2017 Oct 11;17(10):6047-6055. doi: 10.1021/acs.nanolett.7b02366. Epub 2017 Sep 5.

Abstract

Excitation of localized surface plasmons in metal nanostructures generates hot electrons that can be transferred to an adjacent semiconductor, greatly enhancing the potential light-harvesting capabilities of photovoltaic and photocatalytic devices. Typically, the external quantum efficiency of these hot-electron devices is too low for practical applications (<1%), and the physics underlying this low yield remains unclear. Here, we use transient absorption spectroscopy to quantify the efficiency of the initial electron transfer in model systems composed of gold nanoparticles (NPs) fully embedded in TiO or AlO films. In independent experiments, we measure free carrier absorption and electron-phonon decay in the model systems and determine that the electron-injection efficiency from the Au NPs to the TiO ranges from about 25% to 45%. While much higher than some previous estimates, the measured injection efficiency is within an upper-bound estimate based on a simple approximation for the Au hot-electron energy distribution. These results have important implications for understanding the achievable injection efficiencies of hot-electron plasmonic devices and show that the injection efficiency can be high for Au NPs fully embedded within a semiconductor with dimensions less than the Au electron mean free path.

摘要

金属纳米结构中局域表面等离激元的激发会产生热电子,这些热电子可以转移到相邻的半导体中,极大地提高了光伏和光催化器件的潜在光捕获能力。通常,这些热电子器件的外量子效率太低,不适合实际应用(<1%),并且这种低产率的物理机制尚不清楚。在这里,我们使用瞬态吸收光谱来量化由完全嵌入 TiO 或 AlO 薄膜中的金纳米颗粒(NPs)组成的模型系统中初始电子转移的效率。在独立的实验中,我们测量了模型系统中的自由载流子吸收和电子-声子衰减,并确定了从 Au NPs 到 TiO 的电子注入效率约为 25%至 45%。虽然远高于一些先前的估计,但测量的注入效率在基于 Au 热电子能量分布的简单近似的上限估计范围内。这些结果对于理解热电子等离子体器件的可实现注入效率具有重要意义,并表明对于尺寸小于 Au 电子平均自由程的完全嵌入半导体中的 Au NPs,注入效率可以很高。

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