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Sol-Gel Derived Active Material for Yb Thin-Disk Lasers.

作者信息

Almeida Rui M, Ribeiro Tiago, Santos Luís F

机构信息

Centro de Química Estrutural/DEQ, Instituto Superior Técnico, Universidade de Lisboa, Av. Rovisco Pais, 1049-001 Lisboa, Portugal.

出版信息

Materials (Basel). 2017 Sep 2;10(9):1020. doi: 10.3390/ma10091020.

Abstract

A ytterbium doped active material for thin-disk laser was developed based on aluminosilicate and phosphosilicate glass matrices containing up to 30 mol% YbO. Thick films and bulk samples were prepared by sol-gel processing. The structural nature of the base material was assessed by X-ray diffraction and Raman spectroscopy and the film morphology was evidenced by scanning electron microscopy. The photoluminescence (PL) properties of different compositions, including emission spectra and lifetimes, were also studied. Er was used as an internal reference to compare the intensities of the Yb PL peaks at ~ 1020 nm. The Yb PL lifetimes were found to vary between 1.0 and 0.5 ms when the Yb concentration increased from 3 to 30 mol%. Based on a figure of merit, the best active material selected was the aluminosilicate glass composition 71 SiO₂-14 AlO-15 YbO (in mol%). An active disk, ~ 36 μm thick, consisting of a Bragg mirror, an aluminosilicate layer doped with 15 mol% Yb and an anti-reflective coating, was fabricated.

摘要
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4f56/5615675/594b66071f48/materials-10-01020-g001.jpg

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