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本征半导体纳米线中太赫兹光电导率的量子等离激元模型

Quantum plasmon model for the terahertz photoconductivity in intrinsic semiconductor nanowires.

作者信息

Yan Jie-Yun

机构信息

School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, People's Republic of China. State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, People's Republic of China.

出版信息

J Phys Condens Matter. 2017 Oct 18;29(41):415302. doi: 10.1088/1361-648X/aa7fd2. Epub 2017 Sep 4.

Abstract

A quantum plasmon model for the terahertz photoconductivity in intrinsic semiconductor nanowires is developed. The classical plasmon model assumes the excited electron in semiconductors feels a restoring force generated by a harmonic-oscillator potential. Although it is successfully applied to explain the terahertz photoconductivity in semiconductor nanowires, the classical treatment of the potential weakens accurate theoretical analysis. Here I treat the potential in a full quantum way and present an exact analytical formula for photoconductivity. The formula not only gives more reasonable photoconductivity, but also has the same conciseness when compared with that of the classical plasmon model. The validity of the quantum plasmon model is proved independently by numerical calculations in real space.

摘要

建立了一种用于本征半导体纳米线太赫兹光电导率的量子等离子体模型。经典等离子体模型假设半导体中的激发电子感受到由简谐振子势产生的恢复力。尽管它成功地用于解释半导体纳米线中的太赫兹光电导率,但对势的经典处理削弱了精确的理论分析。在此,我以完全量子的方式处理该势,并给出了光电导率的精确解析公式。该公式不仅给出了更合理的光电导率,而且与经典等离子体模型的公式相比具有相同的简洁性。通过实空间中的数值计算独立证明了量子等离子体模型的有效性。

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