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通过互补客体插层降低电活性金属-有机骨架的能带隙。

Lowering Band Gap of an Electroactive Metal-Organic Framework via Complementary Guest Intercalation.

机构信息

College of Materials Science and Engineering, Fuzhou University , Fuzhou, Fujian 350002, China.

Department of Chemistry, Clemson University , Clemson, South Carolina 29634, United States.

出版信息

ACS Appl Mater Interfaces. 2017 Sep 27;9(38):32413-32417. doi: 10.1021/acsami.7b07292. Epub 2017 Sep 15.

DOI:10.1021/acsami.7b07292
PMID:28872818
Abstract

A new honeycomb-shaped electroactive metal-organic framework (MOF) has been constructed from an electron deficient naphthalenediimide (NDI) ligand equipped with two terminal salicylic acid groups. π-Intercalation of electron-rich planar tetrathiafulvalene (TTF) guests between the NDI ligands stacked along the walls lowers the electronic band gap of the material by ca. 1 eV. An improved electron delocalization through the guest-mediated π-donor/acceptor stacks is attributed to the diminished band gap of the doped material, which forecasts an improved electrical conductivity.

摘要

一种新型的蜂窝状电活性金属有机骨架(MOF)由一个电子缺失的萘二酰亚胺(NDI)配体构建而成,该配体带有两个末端水杨酸基团。电子富平面四硫富瓦烯(TTF)客体在沿着壁堆积的 NDI 配体之间的π-插入作用使材料的电子能带隙降低了约 1 eV。通过客体介导的π-供体/受体堆积体来改善电子离域作用归因于掺杂材料的能带隙减小,这预示着电导率的提高。

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