Collaborative Innovation Center of Advanced Microstructure , Nanjing 210093, China.
ACS Appl Mater Interfaces. 2017 Oct 4;9(39):34448-34455. doi: 10.1021/acsami.7b09807. Epub 2017 Sep 25.
Two-dimensional (2D) materials have attracted broad research interests across various nonlinear optical (NLO) studies, including nonlinear photoluminescence (NPL), second harmonic generation (SHG), transient absorption (TA), and so forth. These studies have unveiled important features and information of 2D materials, such as in grain boundaries, defects, and crystal orientations. However, as most research studies focused on the intrinsic NLO processes, little attention has been paid to the substrates underneath. Here, we discovered that the NLO signal depends significantly on the thickness of SiO in SiO/Si substrates. A 40-fold enhancement of the NPL signal of graphene was observed when the SiO thickness was varied from 270 to 125 nm under 800 nm excitation. We systematically studied the NPL intensity of graphene on three different SiO thicknesses within a pump wavelength range of 800-1100 nm. The results agreed with a numerical model based on back reflection and interference. Furthermore, we have extended our measurements to include TA and SHG of graphene and MoS, confirming that SiO thickness has similar effects on all of the three major types of NLO signals. Our results will serve as an important guidance for choosing the optimum substrates to conduct NLO research studies on 2D materials.
二维(2D)材料在各种非线性光学(NLO)研究中引起了广泛的研究兴趣,包括非线性光致发光(NPL)、二次谐波产生(SHG)、瞬态吸收(TA)等。这些研究揭示了 2D 材料的重要特征和信息,如晶界、缺陷和晶体取向。然而,由于大多数研究集中在材料的固有 NLO 过程上,很少关注下面的衬底。在这里,我们发现 NLO 信号的显著取决于 SiO/Si 衬底中 SiO 的厚度。当在 800nm 激发下,SiO 厚度从 270nm 变化到 125nm 时,石墨烯的 NPL 信号增强了 40 倍。我们在 800-1100nm 的泵浦波长范围内,系统地研究了石墨烯在三种不同 SiO 厚度上的 NPL 强度。结果与基于背反射和干涉的数值模型一致。此外,我们将测量扩展到包括石墨烯和 MoS 的 TA 和 SHG,证实 SiO 厚度对所有三种主要 NLO 信号都有类似的影响。我们的研究结果将为选择最佳衬底进行 2D 材料的 NLO 研究提供重要指导。