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氮掺杂对石墨烯量子点光致发光强度的影响。

Effect of nitrogen doping on the photoluminescence intensity of graphene quantum dots.

作者信息

Santiago Svette Reina Merden, Wong Yee Ann, Lin Tzu-Neng, Chang Chiao-Hsin, Yuan Chi-Tsu, Shen Ji-Lin

出版信息

Opt Lett. 2017 Sep 15;42(18):3642-3645. doi: 10.1364/OL.42.003642.

Abstract

We have developed a facile, fast, and one-step synthetic method to prepare graphene quantum dots (GQDs) simultaneously with nitrogen (N) doping via pulsed laser ablation. The N-doped GQDs (N-GQDs) with an average size around 3 nm and an N/C atomic ratio of 33% have been obtained. The N-GQDs emit blue photoluminescence (PL), where the PL intensity enhances as the N doping increases. The PL enhancement for the N-GQDs with a factor as high as 25 has been achieved as compared to GQDs. The origin of the PL enhancement in GQDs after N doping is attributed to the increased densities of pyridinic and graphitic N.

摘要

我们已经开发出一种简便、快速的一步合成方法,通过脉冲激光烧蚀同时制备氮(N)掺杂的石墨烯量子点(GQD)。已获得平均尺寸约为3 nm且N/C原子比为33%的N掺杂GQD(N-GQD)。N-GQD发出蓝色光致发光(PL),其中PL强度随着N掺杂量的增加而增强。与GQD相比,N-GQD的PL增强因子高达25。N掺杂后GQD中PL增强的原因归因于吡啶型氮和石墨型氮密度的增加。

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