College of Science, Guilin University of Technology, Guilin 541004, PR China.
Institute of Nanochemistry and Nanobiology, School of Environmental and Chemical Engineering, Shanghai University, Shanghai 200444, PR China.
J Colloid Interface Sci. 2018 Nov 1;529:205-213. doi: 10.1016/j.jcis.2018.06.016. Epub 2018 Jun 7.
Sulfur-doped graphene quantum dots (S-GQDs) were synthesized by two facile hydrothermal technologies. The photoluminescence (PL) properties of the GQDs and S-GQDs samples were mainly investigated. Through regulating the content of S powders in S-GQDs synthesizing process, the optimal S-GQDs have a high S/C atomic ratio of 19.53%. The S doping introduce more functional groups on the C sp skeleton of S-3 sample and result in the appearance of the strong absorption band in the UV region. In comparison with other reported S-GQDs, the S-GQDs exhibit overwhelming high fluorescence quantum yield (57%) and excitation-independent emission, resulting from the outcome of the doped sulfur atoms. Moreover, the PL intensity of GQDs can be increased by doping it with S and the increasing efficiency depends on the thiophene sulfur content.
硫掺杂石墨烯量子点（S-GQDs）是通过两种简便的水热技术合成的。主要研究了 GQDs 和 S-GQDs 样品的光致发光（PL）性质。通过调节 S-GQDs 合成过程中 S 粉末的含量，可以得到最佳的 S-GQDs，其 S/C 原子比高达 19.53%。S 掺杂在 S-3 样品的 C sp 骨架上引入了更多的官能团，导致在 UV 区域出现强吸收带。与其他报道的 S-GQDs 相比，S-GQDs 具有极高的荧光量子产率（57%）和激发独立发射，这是掺杂硫原子的结果。此外，通过掺杂 S 可以提高 GQDs 的 PL 强度，并且增加效率取决于噻吩硫的含量。
