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反芳香卟啉类化合物的光学和磁性性质

Optical and magnetic properties of antiaromatic porphyrinoids.

作者信息

Valiev Rashid R, Fliegl Heike, Sundholm Dage

机构信息

Tomsk Polytechnic University, Lenina 30, Tomsk, Russian Federation.

出版信息

Phys Chem Chem Phys. 2017 Oct 4;19(38):25979-25988. doi: 10.1039/c7cp05460b.

Abstract

Magnetic and spectroscopic properties of a number of formally antiaromatic carbaporphyrins, carbathiaporphyrins and isophlorins with 4n π electrons have been investigated at density functional theory and ab initio levels of theory. The calculations show that the paratropic contribution to the magnetically induced ring-current strength susceptibility and the magnetic dipole-transition moment between the ground and the lowest excited state are related. The vertical excitation energy (VEE) of the first excited state decreases with increasing ring-current strength susceptibility, whereas the VEE of the studied higher-lying excited states are almost independent of the size of the ring-current strength susceptibility. Strong antiaromatic porphyrinoids, based on the magnitude of the paratropic ring-current strength susceptibility, have small energy gaps between the highest occupied and lowest unoccupied molecular orbitals and a small VEE of the first excited state. The calculations show that only the lowest S → S transition contributes signficantly to the magnetically induced ring-current strength susceptibility of the antiaromatic porphyrinoids. The decreasing optical gap combined with a large angular momentum contribution to the magnetic transition moment from the first excited state explains why molecules III-VII are antiaromatic with very strong paratropic ring-current strength susceptibilities. The S → S transition is a magnetic dipole-allowed electronic transition that is typical for antiaromatic porphyrinoids with 4n π electrons.

摘要

已在密度泛函理论和从头算理论水平上研究了一些具有4n个π电子的形式上反芳香性的碳卟啉、碳硫卟啉和异卟啉的磁性和光谱性质。计算表明,对磁诱导环电流强度磁化率的抗磁贡献与基态和最低激发态之间的磁偶极跃迁矩有关。第一激发态的垂直激发能(VEE)随环电流强度磁化率的增加而降低,而所研究的较高激发态的VEE几乎与环电流强度磁化率的大小无关。基于抗磁环电流强度磁化率的大小,强反芳香性卟啉类化合物在最高占据分子轨道和最低未占据分子轨道之间具有较小的能隙以及第一激发态较小的VEE。计算表明,只有最低的S→S跃迁对反芳香性卟啉类化合物的磁诱导环电流强度磁化率有显著贡献。光学能隙的减小与第一激发态对磁跃迁矩的大角动量贡献相结合,解释了为什么分子III - VII是具有非常强的抗磁环电流强度磁化率的反芳香性化合物。S→S跃迁是一种磁偶极允许的电子跃迁,这对于具有4n个π电子的反芳香性卟啉类化合物来说是典型的。

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