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Cr掺杂对α-FeO薄膜电子结构和功函数的影响。

Effect of Cr-doping on the electronic structure and work function of α-FeO thin films.

作者信息

Li Xiaolong, Chen Li, Liu Hongmei, Mi Zhishan, Shi Changmin, Qiao Lijie

机构信息

Corrosion and Protection Center, Key Laboratory for Environmental Fracture (MOE), University of Science and Technology Beijing, Beijing 100083, People's Republic of China.

出版信息

Phys Chem Chem Phys. 2017 Oct 4;19(38):26248-26254. doi: 10.1039/c7cp02472j.

Abstract

We investigate the effect of Cr-doping on the properties of α-FeO(001) thin films with Fe termination using the local density approximation plus a Hubbard U correction. We find that both the doping site and concentration of Cr atoms dramatically affect the electronic structure and work function (W) of α-FeO films. The results demonstrate that it is most energetically favorable for Cr atoms to substitute the Fe atoms in the sub-surface of α-FeO thin films. The doping of Cr atoms in the sub-surface not only lowers the band gap of the film but also greatly enhances the work function by 0.9 eV with respect to the pure α-FeO film. The increase of W correlates with the reduction of occupied O p/p states at the top valence band which leads to a decrease of the Fermi energy. As the Cr concentration changes from 4.2% to 16.7%, the W firstly increases, and then drops. The W reaches a maximum of 6.61 eV for the Cr concentration of 8.3%. These results suggest that doping Cr atoms in a α-FeO(001) thin film can increase the corrosion potential and benefits the protection of steel from corrosion.

摘要

我们使用局域密度近似加上哈伯德U修正来研究Cr掺杂对具有Fe终止的α-FeO(001)薄膜性质的影响。我们发现Cr原子的掺杂位置和浓度都会显著影响α-FeO薄膜的电子结构和功函数(W)。结果表明,对于Cr原子而言,取代α-FeO薄膜次表面的Fe原子在能量上最为有利。在次表面掺杂Cr原子不仅降低了薄膜的带隙,而且相对于纯α-FeO薄膜,还极大地提高了功函数0.9 eV。功函数的增加与价带顶占据的O p/p态的减少相关,这导致费米能降低。随着Cr浓度从4.2%变化到16.7%,功函数先增加,然后下降。对于8.3%的Cr浓度,功函数达到最大值6.61 eV。这些结果表明,在α-FeO(001)薄膜中掺杂Cr原子可以提高腐蚀电位,有利于保护钢免受腐蚀。

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