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立方碳化硅中硼替代导致的异常强声子散射

Exceptionally Strong Phonon Scattering by B Substitution in Cubic SiC.

作者信息

Katre Ankita, Carrete Jesús, Dongre Bonny, Madsen Georg K H, Mingo Natalio

机构信息

LITEN, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France.

Institute of Materials Chemistry, TU Wien, A-1060 Vienna, Austria.

出版信息

Phys Rev Lett. 2017 Aug 18;119(7):075902. doi: 10.1103/PhysRevLett.119.075902.

Abstract

We use ab initio calculations to predict the thermal conductivity of cubic SiC with different types of defects. An excellent quantitative agreement with previous experimental measurements is found. The results unveil that B_{C} substitution has a much stronger effect than any of the other defect types in 3C-SiC, including vacancies. This finding contradicts the prediction of the classical mass-difference model of impurity scattering, according to which the effects of B_{C} and N_{C} would be similar and much smaller than that of the C vacancy. The strikingly different behavior of the B_{C} defect arises from a unique pattern of resonant phonon scattering caused by the broken structural symmetry around the B impurity.

摘要

我们使用从头算计算来预测具有不同类型缺陷的立方碳化硅的热导率。发现与先前的实验测量结果有出色的定量一致性。结果表明,在3C-SiC中,BC取代比任何其他缺陷类型(包括空位)具有更强的影响。这一发现与杂质散射的经典质量差模型的预测相矛盾,根据该模型,BC和NC的影响将相似且远小于C空位的影响。BC缺陷的显著不同行为源于B杂质周围结构对称性破坏引起的独特共振声子散射模式。

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