Wang Jin, Yang Guofeng, Sun Rui, Yan Pengfei, Lu Yanan, Xue Junjun, Chen Guoqing
School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, Jiangnan University, Wuxi 214122, China.
Phys Chem Chem Phys. 2017 Oct 11;19(39):27052-27058. doi: 10.1039/c7cp05386j.
In this paper, we perform a systematic and rigorous study to evaluate the Ohmic nature of the top-contact formed by the monolayer ReS (mReS) and metals (gold, silver, platinum, nickel, titanium, and scandium) by means of first-principles density functional theory calculations. We investigate the potential barrier, charge transfer and atomic orbital overlap at the mReS-metal interface in consideration of van der Waals forces to understand how efficiently carriers could be injected from the metal contact to the mReS channel. ReS is physisorbed on Au and Ag, which leads to little perturbation of its electronic structures and forms a larger Schottky contact and a higher tunnel barrier at the interface. ReS is chemisorbed on Ti and Sc, where the bonding strongly perturbs the electronic structures and is found to be purely Ohmic. The bonding of ReS on Pt and Ni lies between these two extreme cases, demonstrating an intermediate behavior. These findings not only provide an insight into the mReS-metal interfaces but may also prove to be instrumental in the future design of ReS-based devices with good performance.
在本文中,我们通过第一性原理密度泛函理论计算,对单层ReS(mReS)与金属(金、银、铂、镍、钛和钪)形成的顶部接触的欧姆特性进行了系统而严谨的研究。考虑到范德华力,我们研究了mReS-金属界面处的势垒、电荷转移和原子轨道重叠,以了解载流子从金属接触注入到mReS沟道的效率。ReS物理吸附在金和银上,这对其电子结构几乎没有扰动,在界面处形成较大的肖特基接触和较高的隧道势垒。ReS化学吸附在钛和钪上,其键合强烈扰动电子结构,被发现是纯欧姆性的。ReS与铂和镍的键合介于这两种极端情况之间,表现出中间行为。这些发现不仅有助于深入了解mReS-金属界面,而且可能在未来高性能ReS基器件的设计中发挥重要作用。