亮合金型-II 量子点及其在发光二极管中的应用。
Bright alloy type-II quantum dots and their application to light-emitting diodes.
机构信息
Jiangxi Engineering Laboratory for Optoelectronics Testing Technology, Nanchang Hangkong University, Nanchang 330063, PR China; School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW 2052, Australia.
Jiangxi Engineering Laboratory for Optoelectronics Testing Technology, Nanchang Hangkong University, Nanchang 330063, PR China.
出版信息
J Colloid Interface Sci. 2018 Jan 15;510:376-383. doi: 10.1016/j.jcis.2017.09.080. Epub 2017 Sep 22.
Type-II quantum dots (QDs) are emerging as a promising candidate for full color light sources owing to their advantages in achieving full color light by tuning the heterostructures. Despite the recent developments in type-II QDs, the choices of proper materials are limited for the composition of a high-quality QD and it still remains a big challenge to enhance the photoluminescence (PL) quantum yields (QYs) of type-II QDs for light-emitting diode (LED) applications. Here, we develop CdZnS/ZnSe/ZnS type-II QDs with a maximum quantum yield as high as 88.5%. Time-resolved PL results show that the ZnS shell suppresses non-radiative pathways by passivating the surface of CdZnS/ZnSe, thus leading to a high QY. Moreover, our results demonstrate that the outer ZnS also benefits the charge injection and radiative recombinations of the CdZnS/ZnSe. The LED based on green CdZnS/ZnSe/ZnS QDs achieves a current efficiency (CE) of 9.17cdA, an external quantum efficiency (EQE) of 8.78% and a low turn-on voltage of ∼2.3V.
II 型量子点（QDs）由于其通过调谐异质结构实现全色光的优势，正成为全色光源的有前途的候选者。尽管 II 型 QDs 最近取得了发展，但对于高质量 QD 的组成，合适材料的选择仍然有限，并且仍然是提高用于发光二极管（LED）应用的 II 型 QD 的光致发光（PL）量子产率（QY）的一大挑战。在这里，我们开发了 CdZnS/ZnSe/ZnS 型 II 型 QD，其最大量子产率高达 88.5%。时间分辨 PL 结果表明，ZnS 壳通过钝化 CdZnS/ZnSe 的表面来抑制非辐射途径，从而导致高 QY。此外，我们的结果表明，外层 ZnS 还有助于 CdZnS/ZnSe 的电荷注入和辐射复合。基于绿色 CdZnS/ZnSe/ZnS QD 的 LED 实现了 9.17cdA 的电流效率（CE）、8.78%的外量子效率（EQE）和低的开启电压约 2.3V。
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