Department of Materials Science and Engineering , Hongik University , Seoul 04066 , Korea.
ACS Appl Mater Interfaces. 2019 Dec 11;11(49):46062-46069. doi: 10.1021/acsami.9b14763. Epub 2019 Dec 3.
Considering a strict global environmental regulation, fluorescent quantum dots (QDs) as key visible emitters in the next-generation display field should be compositionally non-Cd. When compared to green and red emitters obtainable from size-controlled InP QDs, development of non-Cd blue QDs remains stagnant. Herein, we explore the synthesis of non-Cd, ZnSe-based QDs with binary and ternary compositions toward blue photoluminescence (PL). First, the size increment of binary ZnSe QDs is attempted by a multiply repeated growth until blue PL is attained. Although this approach offers a relevant blue color, excessively large-sized ZnSe QDs inevitably entail a low PL quantum yield. As an alternative strategy to the above size enlargement, the alloying of high-band gap ZnSe with lower-band gap ZnTe in QD synthesis is carried out. These alloyed ternary ZnSeTe QDs after ZnS shelling exhibit a systematically tunable PL of 422-500 nm as a function of Te/Se ratio. Analogous to the state-of-the-art heterostructure of InP QDs with a double-shelling scheme, an inner shell of ZnSe is newly inserted with different thicknesses prior to an outer shell of ZnS, where the effects of the thickness of ZnSe inner shell on PL properties are examined. Double-shelled ZnSeTe/ZnSe/ZnS QDs with an optimal thickness of the ZnSe inner shell are then employed for all-solution-processed fabrication of a blue QD light-emitting diode (QLED). The present blue QLED as the first ZnSeTe QD-based device yields a peak luminance of 1195 cd/m, a current efficiency of 2.4 cd/A, and an external quantum efficiency of 4.2%, corresponding to the record values reported from non-Cd blue devices.
考虑到严格的全球环境法规,作为下一代显示领域关键可见光发射器的荧光量子点(QDs)在组成上应不含镉。与可通过尺寸控制的 InP QDs 获得的绿色和红色发射器相比,非镉蓝色 QDs 的开发仍然停滞不前。在此,我们探索了具有二元和三元组成的非镉、ZnSe 基 QD 的合成,以获得蓝色光致发光(PL)。首先,通过多次重复生长尝试增加二元 ZnSe QD 的尺寸,直到获得蓝色 PL。尽管这种方法提供了相关的蓝色颜色,但过大尺寸的 ZnSe QD 不可避免地导致低 PL 量子产率。作为上述尺寸增大的替代策略,在 QD 合成中进行高带隙 ZnSe 与低带隙 ZnTe 的合金化。这些经过 ZnS 壳层处理的合金化三元 ZnSeTe QD 表现出 422-500nm 的系统可调 PL,作为 Te/Se 比的函数。类似于具有双层壳方案的 InP QD 的最新异质结构,在 ZnS 外壳之前新插入具有不同厚度的 ZnSe 内壳,其中检查了 ZnSe 内壳厚度对 PL 性质的影响。然后,使用具有最佳 ZnSe 内壳厚度的双层 ZnSeTe/ZnSe/ZnS QD 进行全溶液处理制造蓝色 QD 发光二极管(QLED)。作为第一个基于 ZnSeTe QD 的器件的本征蓝色 QLED 产生 1195 cd/m 的峰值亮度、2.4 cd/A 的电流效率和 4.2%的外量子效率,对应于非镉蓝色器件报告的记录值。