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直接观察钇稳定氧化锆晶界处氧空位的分布。

Direct Observation of Oxygen Vacancy Distribution across Yttria-Stabilized Zirconia Grain Boundaries.

机构信息

Institute of Engineering Innovation, The University of Tokyo , 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan.

Nanostructures Research Laboratory, Japan Fine Ceramics Center , 2-4-1 Mutsuno, Atsuta-ku, Nagoya, Aichi 456-8587, Japan.

出版信息

ACS Nano. 2017 Nov 28;11(11):11376-11382. doi: 10.1021/acsnano.7b05943. Epub 2017 Oct 19.

Abstract

Crystalline interfaces in materials often govern the macroscopic functional properties owing to their complex structure and chemical inhomogeneity. For ionic crystals, however, such understanding has been precluded by the debatable local anion distribution across crystal interfaces. In this study, using yttria-stabilized zirconia as a model material, the oxygen vacancy distribution across individual grain boundaries was directly quantified by atomic-resolution scanning transmission electron microscopy with ultrahigh-sensitive energy-dispersive X-ray spectroscopy. Combined with dynamical scattering calculations, we unambiguously show that the relative oxygen concentrations increase in four high-angle grain boundaries, indicating that the oxygen vacancies are actually depleted near the grain boundary cores. These results experimentally evidence that the long-range electric interaction is the dominant factor to determine the local point defect distribution at ionic crystal interfaces.

摘要

材料中的晶界通常由于其复杂的结构和化学不均匀性而控制着宏观功能特性。然而,对于离子晶体,由于晶体界面上阴离子的局部分布存在争议,因此这种理解受到了阻碍。在这项研究中,使用氧化钇稳定的氧化锆作为模型材料,通过具有超高灵敏度的能量色散 X 射线光谱的原子分辨率扫描透射电子显微镜直接定量了单个晶界处的氧空位分布。结合动态散射计算,我们明确地表明,在四个高角度晶界处,相对氧浓度增加,这表明氧空位实际上在晶界核心附近耗尽。这些结果从实验上证明,长程电相互作用是决定离子晶体界面处局部点缺陷分布的主要因素。

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