CNR-ISMN, via Gobetti, 10140129 Bologna, Italy.
CNR-IMM via Gobetti, 101 40129 Bologna, Italy.
Langmuir. 2017 Nov 14;33(45):12859-12864. doi: 10.1021/acs.langmuir.7b02102. Epub 2017 Nov 5.
Ferroelectric molecular compounds present great advantages for application in electronics because they combine high polarization values, comparable to those of inorganic materials, with the flexibility and low-cost properties of organic ones. However, some limitations to their applicability are related to the high crystallinity required to deploy ferroelectricity. In this article, highly ordered ferroelectric patterned thin films of diisopropylammonium bromide have been successfully fabricated by a lithographically controlled wetting technique. Confinement favors the self-organization of ferroelectric crystals, avoiding the formation of polymorphs and promoting the long-range orientation of crystallographic axes. Patterned structures present high stability, and the polarization can be switched to be arranged in stable domain pattern for application in devices.
铁电分子化合物在电子学应用方面具有很大的优势，因为它们结合了高极化值，可与无机材料相媲美，同时具有有机材料的灵活性和低成本特性。然而，它们在应用方面的一些局限性与部署铁电性所需的高结晶度有关。在本文中，通过光刻控制的润湿技术成功制备了高度有序的二异丙基溴化铵铁电图案化薄膜。限制有利于铁电晶体的自组织，避免了多晶型的形成，并促进了晶轴的长程取向。图案化结构具有高稳定性，并且可以切换极化以排列成稳定的畴图案，用于器件应用。
