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电解析驱动和压力控制的微结构化表面上连续气泡的扩散生长。

Electrolysis-Driven and Pressure-Controlled Diffusive Growth of Successive Bubbles on Microstructured Surfaces.

机构信息

Fluid Mechanics Group, Universidad Carlos III de Madrid , Avda. de la Universidad 30, 28911 Leganés Madrid, Spain.

出版信息

Langmuir. 2017 Nov 14;33(45):12873-12886. doi: 10.1021/acs.langmuir.7b02978. Epub 2017 Oct 31.

Abstract

Control over the bubble growth rates forming on the electrodes of water-splitting cells or chemical reactors is critical with respect to the attainment of higher energy efficiencies within these devices. This study focuses on the diffusion-driven growth dynamics of a succession of H bubbles generated at a flat silicon electrode substrate. Controlled nucleation is achieved by means of a single nucleation site consisting of a hydrophobic micropit etched within a micrometer-sized pillar. In our experimental configuration of constant-current electrolysis, we identify gas depletion from (i) previous bubbles in the succession, (ii) unwanted bubbles forming on the sidewalls, and (iii) the mere presence of the circular cavity where the electrode is being held. The impact of these effects on bubble growth is discussed with support from numerical simulations. The time evolution of the dimensionless bubble growth coefficient, which is a measure of the overall growth rate of a particular bubble, of electrolysis-generated bubbles is compared to that of CO bubbles growing on a similar surface in the presence of a supersaturated solution of carbonated water. For electrolytic bubbles and under the range of current densities considered here (5-15 A/m), it is observed that H bubble successions at large gas-evolving substrates first experience a stagnation regime, followed by a fast increase in the growth coefficient before a steady state is reached. This clearly contradicts the common assumption that constant current densities must yield time-invariant growth rates. Conversely, for the case of CO bubbles, the growth coefficient successively decreases for every subsequent bubble as a result of the persistent depletion of dissolved CO.

摘要

控制在水电解池或化学反应器的电极上形成的气泡生长速率对于在这些设备中实现更高的能量效率至关重要。本研究专注于在平面硅电极衬底上生成的一系列 H 气泡的扩散驱动生长动力学。通过在微米级支柱内刻蚀疏水性微坑来实现受控成核,从而实现单一成核点。在我们的恒流电解实验配置中,我们确定了来自(i)连续气泡中的气体消耗,(ii)在侧壁上形成的不需要的气泡,以及(iii)电极所在的圆形腔室中仅存在的气体消耗。这些效应对气泡生长的影响通过数值模拟得到了讨论。通过比较与在碳酸饱和溶液中生长的 CO 气泡相比,在类似表面上生成的电解气泡的无量纲气泡生长系数的时间演化,该系数是特定气泡总体生长速率的度量。对于电解气泡,并且在考虑的电流密度范围内(5-15 A/m),在大气体释放衬底上的 H 气泡连续体首先经历停滞状态,然后在达到稳定状态之前,生长系数迅速增加。这显然与恒定电流密度必须产生时间不变的生长速率的常见假设相矛盾。相反,对于 CO 气泡的情况,由于溶解的 CO 的持续消耗,每个后续气泡的生长系数都会相继减小。

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