基于三苯胺修饰的非贵金属钴（II）双三联吡啶配合物的电阻式存储器件。
Resistive memory devices based on a triphenylamine-decorated non-precious cobalt(ii) bis-terpyridine complex.
作者信息
Tang Jian-Hong, Sun Tian-Ge, Shao Jiang-Yang, Gong Zhong-Liang, Zhong Yu-Wu
机构信息
CAS Key Laboratory of Photochemistry, CAS Research/Education Centre for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China.
出版信息
Chem Commun (Camb). 2017 Oct 31;53(87):11925-11928. doi: 10.1039/c7cc05806c.
The ITO/active material/Au sandwiched devices of a cobalt(ii) bis-terpyridine complex decorated with two triphenylamine motifs display appealing flash-type resistive switching with a large ON/OFF ratio (>10) and low operating voltages (<±3 V). In contrast, devices with the triphenylamine-appended terpyridine ligand show WORM-type memory behaviour.
由两个三苯胺基序修饰的钴（II）双三联吡啶配合物构成的ITO/活性材料/金夹心器件表现出具有吸引力的闪存型电阻开关特性，其开/关比大（>10）且工作电压低（<±3 V）。相比之下，带有三苯胺连接的三联吡啶配体的器件表现出一次写入多次读取（WORM）型存储行为。
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