Department of Chemistry, University of Toronto , 80 St. George Street, Toronto, Ontario M5S 3H6, Canada.
J Org Chem. 2017 Dec 1;82(23):12337-12345. doi: 10.1021/acs.joc.7b02162. Epub 2017 Oct 26.
Thionated naphthalene diimides (NDIs) are promising materials for n-type organic semiconductors; despite their potential, synthetic routes to thionated NDIs are generally lengthy, nonselective, and low yielding and their polymeric analogues have yet to be reported in the literature. Here, we describe the rapid and selective thionation of thiophene- and selenophene-flanked NDIs using microwave irradiation and excess Lawesson's reagent. Remarkably, >99% conversion to the trans-dithionated product is observed by NMR within 45 min. Steric effects imparted by NDI core substituents prevent excess thionation, simplifying purification procedures. We apply this methodology to the postpolymerization thionation of NDI-based polymers to afford a series of polymers with varying degrees of thionation. Thionated NDIs exhibit bathochromic shifts of up to ∼100 nm in localized absorption maxima and increased electron affinities.
硫代萘二酰亚胺(NDIs)是一种很有前途的 n 型有机半导体材料;尽管具有这种潜力,但硫代 NDIs 的合成路线通常冗长、非选择性且产率低,并且其聚合物类似物在文献中尚未报道。在这里,我们描述了使用微波辐射和过量劳森试剂对噻吩和硒吩侧翼的 NDIs 进行快速和选择性的硫代化。值得注意的是,通过 NMR 在 45 分钟内观察到超过 99%的反式二硫代产物的转化率。NDI 核心取代基赋予的空间位阻阻止了过度硫代化,简化了纯化程序。我们将该方法应用于基于 NDI 的聚合物的后聚合硫代化,以获得一系列具有不同硫代化程度的聚合物。硫代 NDIs 在局域吸收最大值处表现出高达约 100nm 的红移和增加的电子亲合能。