Deng Wenjuan, Peng Xincun, Zou Jijun, Wang Weilu, Liu Yun, Zhang Tao, Zhang Yijun, Zhang Daoli
Appl Opt. 2017 Nov 10;56(32):8991-8995. doi: 10.1364/AO.56.008991.
Two types of negative electron affinity gallium arsenide (GaAs) wire array photocathodes were fabricated by reactive ion etching and inductively coupled plasma etching of bulk GaAs material. High density GaAs wire arrays with high periodicity and good morphology were verified using scanning electron microscopy, and photoluminescence spectra confirmed the wire arrays had good crystalline quality. Reflection spectra showed that circular GaAs wire arrays had superior light trapping compared with square ones. However, after Cs/O activation, the square GaAs wire array photocathodes showed enhanced spectral response. The integral sensitivity of the square wire array photocathodes was approximately 2.8 times that of the circular arrays.
通过对块状砷化镓（GaAs）材料进行反应离子刻蚀和电感耦合等离子体刻蚀，制备了两种类型的负电子亲和势砷化镓（GaAs）线阵列光电阴极。使用扫描电子显微镜验证了具有高周期性和良好形貌的高密度GaAs线阵列，光致发光光谱证实线阵列具有良好的晶体质量。反射光谱表明，圆形GaAs线阵列比方形线阵列具有更好的光捕获能力。然而，经过Cs/O激活后，方形GaAs线阵列光电阴极表现出增强的光谱响应。方形线阵列光电阴极的积分灵敏度约为圆形阵列的2.8倍。
