砷化镓纳米线/聚(3,4-亚乙基二氧噻吩):聚(苯乙烯磺酸盐)杂化太阳能电池。

GaAs nanowire/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) hybrid solar cells.

机构信息

Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan, 10617, Republic of China.

出版信息

Nanotechnology. 2010 Jul 16;21(28):285203. doi: 10.1088/0957-4484/21/28/285203. Epub 2010 Jun 18.

DOI:10.1088/0957-4484/21/28/285203

PMID:20562485

Abstract

In this paper, a new type of hybrid solar cell based on a heterojunction between poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and vertically aligned n-type GaAs nanowire (NW) arrays is investigated. The GaAs NW arrays are fabricated by directly performing the nano-etching of GaAs wafer with spun-on SiO(2) nanospheres as the etch mask through inductively coupled plasma reactive ion etching. The PEDOT:PSS adheres to the surface of the GaAs NW arrays to form a p-n junction. The morphology of GaAs NW arrays strongly influences the characteristics of the GaAs NW/PEDOT:PSS hybrid solar cells. The suppression of reflectance and the interpenetrating heterojunction interface of GaAs NW arrays offers great improvements in efficiency relative to a conventional planar cell. Compared to the planar GaAs/PEDOT:PSS cells, the power conversion efficiency under AM 1.5 global one sun illumination is improved from 0.29% to 5.8%.

摘要

本文研究了一种基于聚（3,4-亚乙基二氧噻吩）：聚（苯乙烯磺酸盐）（PEDOT:PSS）与垂直排列的 n 型 GaAs 纳米线（NW）阵列异质结的新型混合太阳能电池。GaAs NW 阵列是通过直接在涂有旋涂 SiO2 纳米球的 GaAs 晶片上进行纳米刻蚀，然后通过感应耦合等离子体反应离子刻蚀来制备的。PEDOT:PSS 附着在 GaAs NW 阵列的表面上，形成 p-n 结。GaAs NW 阵列的形态强烈影响 GaAs NW/PEDOT:PSS 混合太阳能电池的特性。GaAs NW 阵列对反射率的抑制和互穿异质结界面提供了相对于传统平面电池的效率的巨大提高。与平面 GaAs/PEDOT:PSS 电池相比，在 AM 1.5 全球阳光照射下的功率转换效率从 0.29%提高到 5.8%。