Chaudhuri S, Bhobe P A, Nigam A K
Discipline of Physics, Indian Institute of Technology Indore, Khandwa Road, Simrol, Indore-453 552, India.
J Phys Condens Matter. 2018 Jan 10;30(1):015703. doi: 10.1088/1361-648X/aa9c10. Epub 2017 Dec 6.
The investigation of the magnetotransport properties on [Formula: see text] [Formula: see text]Sb with 0 [Formula: see text] 0.6 are presented in this paper. The substitution of Sb in place of Sn decreases the anti-site disorder as evident from x-ray diffraction patterns as well as from transport properties measurement. The much-disputed upturn in low temperature electrical resistivity of [Formula: see text]TiSn has been demonstrated to be a result of weak localization induced by anti-site disorder. With increased Sb substitution (⩾25%) the metallic transport behavior of [Formula: see text]TiSn changes to semiconductor-like. At low temperature, carrier transport in such compositions occurs via the variable range hopping mechanism. Moreover, a systematic increase in the anomalous Hall voltage is observed with increasing Sb-content, attributable to a side jump or Berry phase curvature effect. Electrical resistivity in the entire temperature regime hints towards half metallicity of the system. Our ab initio electronic structure calculations using generalised gradient approximation formalism further supports the results of our magnetotransport study.
本文介绍了对0≤x≤0.6的[化学式：见正文][化学式：见正文]Sb的磁输运性质的研究。从X射线衍射图谱以及输运性质测量结果可以明显看出，用Sb取代Sn会降低反位无序。[化学式：见正文]TiSn低温电阻率中备受争议的上升已被证明是由反位无序引起的弱局域化的结果。随着Sb取代量的增加（⩾25%），[化学式：见正文]TiSn的金属输运行为转变为类似半导体的行为。在低温下，此类成分中的载流子输运通过可变范围跳跃机制发生。此外，随着Sb含量的增加，反常霍尔电压会系统性增加，这归因于侧跳或贝里相位曲率效应。整个温度范围内的电阻率表明该系统具有半金属性。我们使用广义梯度近似形式进行的从头算电子结构计算进一步支持了我们磁输运研究的结果。
