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单层过渡金属二硫属化物中的声子边带

Phonon Sidebands in Monolayer Transition Metal Dichalcogenides.

作者信息

Christiansen Dominik, Selig Malte, Berghäuser Gunnar, Schmidt Robert, Niehues Iris, Schneider Robert, Arora Ashish, de Vasconcellos Steffen Michaelis, Bratschitsch Rudolf, Malic Ermin, Knorr Andreas

机构信息

Institut für Theoretische Physik, Nichtlineare Optik und Quantenelektronik, Technische Universität Berlin, 10623 Berlin, Germany.

Chalmers University of Technology, Department of Physics, SE-412 96 Gothenburg, Sweden.

出版信息

Phys Rev Lett. 2017 Nov 3;119(18):187402. doi: 10.1103/PhysRevLett.119.187402. Epub 2017 Nov 1.

Abstract

Excitons dominate the optical properties of monolayer transition metal dichalcogenides (TMDs). Besides optically accessible bright exciton states, TMDs exhibit also a multitude of optically forbidden dark excitons. Here, we show that efficient exciton-phonon scattering couples bright and dark states and gives rise to an asymmetric excitonic line shape. The observed asymmetry can be traced back to phonon-induced sidebands that are accompanied by a polaron redshift. We present a joint theory-experiment study investigating the microscopic origin of these sidebands in different TMD materials taking into account intra- and intervalley scattering channels opened by optical and acoustic phonons. The gained insights contribute to a better understanding of the optical fingerprint of these technologically promising nanomaterials.

摘要

激子主导着单层过渡金属二硫属化物(TMDs)的光学性质。除了光学上可及的明亮激子态外,TMDs还展现出大量光学禁戒的暗激子。在此,我们表明高效的激子 - 声子散射将明亮态和暗态耦合起来,并产生不对称的激子线形。观察到的不对称性可追溯到伴随着极化子红移的声子诱导边带。我们开展了一项理论与实验相结合的研究,考虑光学声子和声学声子开启的谷内和谷间散射通道,探究不同TMD材料中这些边带的微观起源。所获得的见解有助于更好地理解这些具有技术前景的纳米材料的光学指纹。

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