Lin Jie, Hao Wei, Shang Yang, Wang Xiaotian, Qiu Dengli, Ma Guanshui, Chen Chao, Li Shuzhou, Guo Lin
Key Laboratory of Bio-Inspired Smart Interfacial Science and Technology, Ministry of Education, School of Chemistry, Beihang University, Beijing, 100191, P. R. China.
School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.
Small. 2018 Feb;14(8). doi: 10.1002/smll.201703274. Epub 2017 Dec 14.
Semiconductor-based surface enhanced Raman scattering (SERS) has attracted great attention due to its excellent spectral reproducibility, high uniformity, and good anti-interference ability. However, its relatively low SERS sensitivity still hinders its further developments in both performance and applications. Since the SERS is a peculiar surface effect, investigating the facet-dependent SERS activity of semiconductor nanostructures is crucial to boost their SERS signals. Although the semiconductor facet-dependent SERS effect is predicted via numerical calculations, convincing experimental evidence is scarce due to complicated and undefined surface conditions. In this work, three facet-defined ({100}, {110}, and {111} facets) Cu O microcrystals (MCs) with clear surface atomic configuration are utilized to investigate the facet-dependent SERS effect. The results from the Kelvin probe force microscopy measurements on single Cu O polyhedron, demonstrate that the facet-dependent work function plays a crucial role in the interfacial charge transfer process. Comparing with the {110} and {111} facets, the {100} facet possesses the lowest electronic work function, which enables more efficient interfacial charge transfer. The simulation results further confirm that the {100}-facets can transfer the most electrons from Cu O MCs to molecules due to its lowest facet work function, resulting in the largest increment of the molecular polarization.
基于半导体的表面增强拉曼散射(SERS)因其出色的光谱重现性、高均匀性和良好的抗干扰能力而备受关注。然而,其相对较低的SERS灵敏度仍然阻碍了它在性能和应用方面的进一步发展。由于SERS是一种特殊的表面效应,研究半导体纳米结构的晶面依赖性SERS活性对于增强其SERS信号至关重要。尽管通过数值计算预测了半导体晶面依赖性SERS效应,但由于表面条件复杂且不明确,令人信服的实验证据仍然很少。在这项工作中,利用具有清晰表面原子构型的三种晶面定义({100}、{110}和{111}晶面)的CuO微晶(MCs)来研究晶面依赖性SERS效应。对单个CuO多面体进行开尔文探针力显微镜测量的结果表明,晶面依赖性功函数在界面电荷转移过程中起着关键作用。与{110}和{111}晶面相比,{100}晶面具有最低的电子功函数,这使得界面电荷转移更有效。模拟结果进一步证实,{100}晶面因其最低的晶面功函数能够将最多的电子从CuO MCs转移到分子上,从而导致分子极化的最大增量。