State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, P. R. China.
University of Chinese Academy of Sciences, Beijing, 10039, P. R. China.
Angew Chem Int Ed Engl. 2018 Feb 12;57(7):2000-2004. doi: 10.1002/anie.201712986. Epub 2018 Feb 2.
We disclose a novel strategy to design n-type acenes through the introduction of boron-nitrogen coordination bonds (B←N). We synthesized two azaacenes composed of two B←N units and six/eight linearly annelated rings. The B←N unit significantly perturbed the electronic structures of the azaacenes: Unique LUMOs delocalized over the entire acene skeletons and decreased aromaticity of the B←N-adjacent rings. Most importantly, these B←N-containing azaacenes exhibited low-lying LUMO energy levels and high electron affinities, thus leading to n-type character. The solution-processed organic field-effect transistor based on one such azaacene exhibited unipolar n-type characteristics with an electron mobility of 0.21 cm V s .
我们揭示了一种通过引入硼-氮配位键（B←N）来设计 n 型并苯的新策略。我们合成了两个由两个 B←N 单元和六个/八个线性稠合环组成的氮杂并苯。B←N 单元显著改变了氮杂并苯的电子结构：独特的 LUMO 轨道在整个并苯骨架上离域，并且 B←N 相邻环的芳香性降低。最重要的是，这些含 B←N 的氮杂并苯具有较低的 LUMO 能级和较高的电子亲和力，从而表现出 n 型特征。基于其中一种氮杂并苯的溶液处理型有机场效应晶体管表现出单极性 n 型特性，电子迁移率为 0.21 cm V s 。
