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通过调节硫族元素相互作用改善阴离子传输系统:溶剂的影响。

Improvement of Anion Transport Systems by Modulation of Chalcogen Interactions: The influence of solvent.

作者信息

Sánchez-Sanz Goar, Trujillo Cristina

机构信息

Irish Centre of High-End Computing , Grand Canal Quay, Dublin 2, Ireland.

School of Chemistry, Trinity Biomedical Sciences, Trinity College Dublin , 152-160 Pearse Street, Dublin 2, Ireland.

出版信息

J Phys Chem A. 2018 Feb 8;122(5):1369-1377. doi: 10.1021/acs.jpca.7b10920. Epub 2018 Jan 26.

Abstract

A series of potential anion transporters, dithieno[3,2-b;2',3'-d]thiophenes (DTT), involving anion-chalcogen interactions have been studied by analyzing the interaction energy, geometry, and charge transfer. It was found that gas phase calculations show very negative interaction energies with short anion-chalcogen distances, but when solvent effects are considered, the interaction energy values decreased drastically concomitantly with an elongation on the interatomic distances. To enhance the chalcogen interaction between the DTT derivatives and the anion, increasing the anion transporter capacity, bisisothioazole moiety was considered; i.e., the σ-hole of the chalcogen atom was modulated by substitution of the adjacent carbon by a nitrogen atom in the S-C axis, increasing the depth of the σ-hole and therefore the interaction between the chalcogen and anion. Finally, different anions were analyzed within the complexes, finding that F and NO would be the best candidates to form complexes and possibly displace other anions such as Cl or Br.

摘要

通过分析相互作用能、几何结构和电荷转移,对一系列涉及阴离子-硫族元素相互作用的潜在阴离子转运体二噻吩并[3,2 - b;2',3'- d]噻吩(DTT)进行了研究。结果发现,气相计算显示在阴离子-硫族元素距离较短时相互作用能非常负,但考虑溶剂效应时,相互作用能值急剧下降,同时原子间距离伸长。为增强DTT衍生物与阴离子之间的硫族元素相互作用,提高阴离子转运能力,考虑了双异噻唑部分;即通过在S - C轴上用氮原子取代相邻碳来调节硫族元素原子的σ-空穴,增加σ-空穴的深度,从而增强硫族元素与阴离子之间的相互作用。最后,对配合物中的不同阴离子进行了分析,发现F和NO将是形成配合物并可能取代其他阴离子(如Cl或Br)的最佳候选者。

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