Zhou Shaoshuai, Duan Changkui, Han Shuo
Department of Physics, Qufu Normal University, Qufu, Shandong 273165, China.
Dalton Trans. 2018 Jan 30;47(5):1599-1603. doi: 10.1039/c7dt04225f.
We report a novel strategy for optical temperature sensing using the temperature-induced red shift of the charge transfer band (CTB) edge of the VO groups in GdVO:5% Sm. Excitation spectra were recorded at a series of temperatures ranging from 300 to 480 K. It is demonstrated that an excitation intensity of around 360 nm corresponding to the tail of the CTB and an excitation intensity of 407.6 nm corresponding to the H → F transition of Sm exhibit opposite temperature dependence. Based on this, the relative sensitivity was obtained to be 3313/T in our investigated temperature range, which is remarkable progress compared with the optical temperature sensors reported previously. We believe that this work broadens the pathway for the design of highly sensitive temperature sensing materials.
我们报道了一种利用GdVO:5% Sm中VO基团电荷转移带（CTB）边缘的温度诱导红移进行光学温度传感的新策略。在300至480 K的一系列温度下记录了激发光谱。结果表明，对应于CTB尾部的约360 nm激发强度和对应于Sm的H→F跃迁的407.6 nm激发强度呈现出相反的温度依赖性。基于此，在我们研究的温度范围内获得的相对灵敏度为3313/T，与先前报道的光学温度传感器相比，这是显著的进展。我们相信这项工作拓宽了高灵敏度温度传感材料设计的途径。
