School of Advanced Materials and Nanotechnology, Xidian University , Shaanxi 710071, China.
Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, China.
ACS Nano. 2018 Feb 27;12(2):1732-1738. doi: 10.1021/acsnano.7b08447. Epub 2018 Jan 18.
Piezotronic transistors (PTs) that utilize inner crystal potential generated by interface piezoelectric polarization charges as the gate voltage have great potential applications in force/pressure-triggered or controlled electronic devices, sensors, human-machine communication, and microelectromechanical systems. Although the performance of PTs has been partially enhanced by exploring special materials with different geometries or high piezoelectricity, few studies have been focused on the structure design of PT itself to more effectively enhance the performance and structural reliability. Here, an integrated double-channel plane piezotronic transistor is invented as a high-performance pressure-sensing technology. Owing to the double-channel modulation and the plane structure, the PT has the merits of high pressure sensitivity (84.2-104.4 meV/MPa) and high structural reliability, which provides the opportunity for great applications, such as human-computer interfacing, biosensing, and health monitoring.
压电器件晶体管（PTs）利用界面压电极化电荷产生的内晶位势作为栅极电压，在力/压力触发或控制电子设备、传感器、人机通信和微机电系统等领域具有巨大的潜在应用价值。尽管通过探索具有不同几何形状或高压电性的特殊材料，已经部分提高了 PTs 的性能，但很少有研究关注 PT 本身的结构设计，以更有效地提高性能和结构可靠性。在这里，发明了一种集成双通道平面压电器件晶体管作为高性能压力传感技术。由于双通道调制和平面结构，PT 具有高压力灵敏度（84.2-104.4 meV/MPa）和高结构可靠性的优点，为诸如人机接口、生物传感和健康监测等领域的广泛应用提供了机会。
