Liu Y S, Dong Y J, Zhang J, Yu H L, Feng J F, Yang X F
College of Physics and Electronic Engineering, Changshu Institute of Technology, Changshu 215500, People's Republic of China.
Nanotechnology. 2018 Mar 23;29(12):125201. doi: 10.1088/1361-6528/aaa999.
Zigzag silicene nanoribbons (ZSiNRs) in the ferromagnetic edge ordering have a metallic behavior, which limits their applications in spintronics. Here a robustly half-metallic property is achieved by the boron substitution doping at the edge of ZSiNRs. When the impurity atom is replaced by the aluminum atom, the doped ZSiNRs possess a spin semiconducting property. Its band gap is suppressed with the increase of ribbon's width, and a pure thermal spin current is achieved by modulating ribbon's width. Moreover, a negative differential thermoelectric resistance in the thermal charge current appears as the temperature gradient increases, which originates from the fact that the spin-up and spin-down thermal charge currents have diverse increasing rates at different temperature gradient regions. Our results put forward a promising route to design multi-functional spintronic devices which may be applied in future low-power-consumption technologies.
具有铁磁边缘排序的锯齿形硅烯纳米带（ZSiNRs）具有金属行为，这限制了它们在自旋电子学中的应用。在此，通过在ZSiNRs边缘进行硼替代掺杂实现了稳健的半金属特性。当杂质原子被铝原子取代时，掺杂的ZSiNRs具有自旋半导体特性。其带隙随着纳米带宽度的增加而被抑制，并且通过调节纳米带宽度实现了纯热自旋电流。此外，随着温度梯度增加，热电荷电流中出现负微分热电阻，这源于自旋向上和自旋向下的热电荷电流在不同温度梯度区域具有不同的增加速率。我们的结果提出了一条设计多功能自旋电子器件的有前景的途径，这些器件可能应用于未来的低功耗技术。
