Kumar Sunil, Singh Simrjit, Dhawan Punit Kumar, Yadav R R, Khare Neeraj
Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi-110016, India.
Nanotechnology. 2018 Apr 3;29(13):135703. doi: 10.1088/1361-6528/aaa99e.
In this report, we investigate the effect of graphene nanofillers on the thermoelectric properties of BiTe nanosheets and demonstrate the role of interface for enhancing the overall figure of merit (ZT) ∼ 53%. The enhancement in the ZT is obtained due to an increase in the electrical conductivity (∼111%) and decrease in the thermal conductivity (∼12%) resulting from increased conducting channels and phonon scattering, respectively at the interfaces between graphene and BiTe nanosheets. A detailed analysis of the thermal conductivity reveals ∼4 times decrease in the lattice thermal conductivity in contrast to ∼2 times increase in the electronic thermal conductivity after the addition of graphene. Kelvin probe measurements have also been carried which reveals presence of low potential barrier at the interface between graphene and BiTe nanosheets which assist the flow of charge carriers thereby, increasing the mobility of the carriers. Thus, our results reveals a significant decrease in the lattice thermal conductivity (due to the formation of interfaces) and increase in the electron mobility (due to conducting paths at the interfaces) strongly participate in deciding observed enhancement in the thermoelectric figure of merit.
在本报告中,我们研究了石墨烯纳米填料对BiTe纳米片热电性能的影响,并证明了界面在提高整体优值(ZT)约53%方面的作用。ZT的提高是由于石墨烯与BiTe纳米片界面处导电通道增加导致电导率提高(约111%)以及声子散射导致热导率降低(约12%)。对热导率的详细分析表明,添加石墨烯后,晶格热导率降低约4倍,而电子热导率增加约2倍。还进行了开尔文探针测量,结果表明石墨烯与BiTe纳米片界面处存在低势垒,这有助于电荷载流子的流动,从而提高载流子的迁移率。因此,我们的结果表明,晶格热导率的显著降低(由于界面的形成)和电子迁移率的增加(由于界面处的导电路径)有力地参与了决定所观察到的热电优值的提高。