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嵌入 BiTe 纳米片中的石墨烯量子点以提高热电性能。

Graphene Quantum Dots Embedded in BiTe Nanosheets To Enhance Thermoelectric Performance.

机构信息

School of Advanced Materials, Peking University Shenzhen Graduate School , Shenzhen 518055, China.

College of Materials Science and Engineering, Shenzhen University and Shenzhen Key Laboratory of Special Functional Materials , Shenzhen 518060, China.

出版信息

ACS Appl Mater Interfaces. 2017 Feb 1;9(4):3677-3685. doi: 10.1021/acsami.6b14274. Epub 2017 Jan 20.

Abstract

Novel BiTe/graphene quantum dots (BiTe/GQDs) hybrid nanosheets with a unique structure that GQDs are homogeneously embedded in the BiTe nanosheet matrix have been synthesized by a simple solution-based synthesis strategy. A significantly reduced thermal conductivity and enhanced powder factor are observed in the BiTe/GQDs hybrid nanosheets, which is ascribed to the optimized thermoelectric transport properties of the BiTe/GQDs interface. Furthermore, by varying the size of the GQDs, the thermoelectric performance of BiTe/GQDs hybrid nanostructures could be further enhanced, which could be attributed to the optimization of the density and dispersion manner of the GQDs in the BiTe matrix. A maximum ZT of 0.55 is obtained at 425 K for the BiTe/GQDs-20 nm, which is higher than that of BiTe without hybrid nanostrucure. This work provides insights for the structural design and synthesis of BiTe-based hybrid thermoelectric materials, which will be important for future development of broadly functional material systems.

摘要

通过一种简单的基于溶液的合成策略,成功合成了具有独特结构的新型 BiTe/石墨烯量子点(BiTe/GQDs)杂化纳米片,其中 GQDs 均匀嵌入在 BiTe 纳米片基体中。在 BiTe/GQDs 杂化纳米片中观察到热导率显著降低和粉末因子增强,这归因于 BiTe/GQDs 界面的优化热电传输性能。此外,通过改变 GQDs 的尺寸,可以进一步增强 BiTe/GQDs 杂化纳米结构的热电性能,这可以归因于 GQDs 在 BiTe 基体中的密度和分散方式的优化。对于 BiTe/GQDs-20nm,在 425K 时获得了 0.55 的最大 ZT 值,高于没有杂化纳米结构的 BiTe。这项工作为基于 BiTe 的杂化热电材料的结构设计和合成提供了思路,这对于广泛功能材料系统的未来发展将是重要的。

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