School of Nanoscience and Technology, Indian Institute of Technology Kharagpur, Kharagpur, 721302, West Bengal, India.
Department of Physics, Indian Institute of Technology Kharagpur, Kharagpur, 721302, West Bengal, India.
Sci Rep. 2018 Jan 22;8(1):1307. doi: 10.1038/s41598-018-19815-y.
Hollow nanostructures of copper oxides help to stabilize appreciably higher electrochemical characteristics than their solid counter parts of various morphologies. The specific capacitance values, calculated using cyclic voltammetry (CV) and charge-discharge (CD) studies, are found to be much higher than the values reported in literature for copper oxide particles showing intriguing morphologies or even composites with trendy systems like CNTs, rGO, graphene, etc. The proposed cost-effective synthesis route makes these materials industrially viable for application in alternative energy storage devices. The improved electrochemical response can be attributed to effective access to the higher number of redox sites that become available on the surface, as well as in the cavity of the hollow particles. The ion transport channels also facilitate efficient de-intercalation, which results in the enhancement of cyclability and Coulombic efficiency. The charge storage mechanism in copper oxide structures is also proposed in the paper.
氧化铜的中空纳米结构有助于显著提高电化学性能,优于各种形态的实心对应物。通过循环伏安法(CV)和充放电(CD)研究计算出的比电容值比文献中报道的具有有趣形态的氧化铜颗粒甚至与 CNTs、rGO、石墨烯等流行系统的复合材料的值要高得多。所提出的具有成本效益的合成路线使这些材料在替代储能设备中的应用具有工业可行性。电化学响应的改善可归因于有效获得更多的氧化还原活性位,这些活性位不仅在表面上,而且在中空颗粒的空腔中也可获得。离子传输通道还促进了有效的脱插层,从而提高了循环寿命和库仑效率。本文还提出了氧化铜结构中的电荷存储机制。