Center of Electron Microscopy, State Key Laboratory of Silicon Materials, and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, PR China.
Nanoscale. 2018 Feb 8;10(6):2908-2915. doi: 10.1039/c7nr08590g.
Introduced oxygen vacancy on WO with specific exposed facets was prepared through facile solvothermal treatment and different cooling methods. We demonstrated that the density of oxygen defects could be regulated by different cooling methods and speculated that oxygen vacancy with appropriate concentration range could promote photocatalytic activity through suppressing the recombination of photo-induced carriers. The specific exposed facets with higher oxidation efficiency were prepared by solvothermal reaction. WO-A treated by air cooling exhibits the best photocatalytic oxygen evolution rate at 500 μmol g h using AgNO as sacrifice agent under visible light (λ > 400 nm) without any co-catalysts, which is about 2 times higher than WO-N without oxygen defects. This strategy, using different cooling methods to regulate oxygen vacancy concentration on tungsten oxides, could contribute to the design of other high efficiency photocatalysts.
通过简便的溶剂热处理和不同的冷却方法，在 WO 上引入具有特定暴露面的氧空位。我们证明了氧缺陷的密度可以通过不同的冷却方法来调节，并推测适当浓度范围内的氧空位可以通过抑制光生载流子的复合来促进光催化活性。通过溶剂热反应制备了具有更高氧化效率的特定暴露面。WO-A 经空气冷却处理，在可见光（λ＞400nm）下，以 AgNO 为牺牲剂，无需任何助催化剂，光解水制氧的速率可达 500μmol g h，是没有氧空位的 WO-N 的 2 倍。该策略通过不同的冷却方法来调节氧化钨中的氧空位浓度，可用于设计其他高效光催化剂。
