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锂对锗纳米线力学和电学性质的影响。

Lithium effects on the mechanical and electronic properties of germanium nanowires.

作者信息

González-Macías A, Salazar F, Miranda A, Trejo-Baños A, Pérez L A, Carvajal E, Cruz-Irisson M

机构信息

Instituto Politécnico Nacional, ESIME-Culhuacán, Av. Santa Ana 1000, 04430, México, Ciudad de México.

出版信息

Nanotechnology. 2018 Apr 2;29(15):154004. doi: 10.1088/1361-6528/aaaad4.

DOI:10.1088/1361-6528/aaaad4
PMID:29372891
Abstract

Semiconductor nanowire arrays promise rapid development of a new generation of lithium (Li) batteries because they can store more Li atoms than conventional crystals due to their large surface areas. During the charge-discharge process, the electrodes experience internal stresses that fatigue the material and limit the useful life of the battery. The theoretical study of electronic and mechanical properties of lithiated nanowire arrays allows the designing of electrode materials that could improve battery performance. In this work, we present a density functional theory study of the electronic band structure, formation energy, binding energy, and Young's modulus (Y) of hydrogen passivated germanium nanowires (H-GeNWs) grown along the [111] and [001] crystallographic directions with surface and interstitial Li atoms. The results show that the germanium nanowires (GeNWs) with surface Li atoms maintain their semiconducting behavior but their energy gap size decreases when the Li concentration grows. In contrast, the GeNWs can have semiconductor or metallic behavior depending on the concentration of the interstitial Li atoms. On the other hand, Y is an indicator of the structural changes that GeNWs suffer due to the concentration of Li atoms. For surface Li atoms, Y stays almost constant, whereas for interstitial Li atoms, the Y values indicate important structural changes in the GeNWs.

摘要

半导体纳米线阵列有望推动新一代锂电池的快速发展,因为由于其较大的表面积,它们比传统晶体能够存储更多的锂原子。在充放电过程中,电极会承受内部应力,这种应力会使材料疲劳并限制电池的使用寿命。对锂化纳米线阵列的电子和机械性能进行理论研究,有助于设计出能够提高电池性能的电极材料。在这项工作中,我们对沿[111]和[001]晶体学方向生长且带有表面和间隙锂原子的氢钝化锗纳米线(H-GeNWs)的电子能带结构、形成能、结合能和杨氏模量(Y)进行了密度泛函理论研究。结果表明,带有表面锂原子的锗纳米线(GeNWs)保持其半导体行为,但随着锂浓度的增加,其能隙尺寸减小。相比之下,GeNWs的行为可以是半导体或金属,这取决于间隙锂原子的浓度。另一方面,Y是GeNWs由于锂原子浓度而发生结构变化的一个指标。对于表面锂原子,Y几乎保持不变,而对于间隙锂原子,Y值表明GeNWs发生了重要的结构变化。

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引用本文的文献

1
Interstitial sodium and lithium doping effects on the electronic and mechanical properties of silicon nanowires: a DFT study.间隙钠和锂掺杂对硅纳米线的电子和机械性能的影响:DFT 研究。
J Mol Model. 2019 Nov 9;25(11):338. doi: 10.1007/s00894-019-4239-5.